Tip Avalanche Photodiode – A New Wide Spectral Range Silicon Photomultiplier

Vinogradov, Sergey; Popova, E.; Schmailzl, Wolfgang; Engelmann, Eugen

doi:10.1201/9781003147633-9

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To overcome the limitations of planar SiPMs and the drawbacks of non-planar SiPMs mentioned above, a spherical junction-based SiPM—tip avalanche photodiode (TAPD), has recently been developed [ 80 , 81 , 82 ] ( Figure 11 ). The TAPD design approach transforms the edge breakdown problem into a benefit of highly efficient collection and multiplication of photoelectrons in the focusing electric field, features low breakdown voltage and low capacitance, and eliminates the need for borders between the cells.…”

Section: Non-planar Apd and Sipm Designsmentioning

confidence: 99%

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Vinogradov

2023

Sensors

Self Cite

View full text Add to dashboard Cite

Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon photomultipliers (SiPM) are designed as an array of Geiger-mode APD cells based on planar p–n junctions. However, the planar design faces an inherent trade-off between photon detection efficiency and dynamic range due to loss of an active area at the cell edges. Non-planar designs of APDs and SiPMs have also been known since the development of spherical APDs (1968), metal-resistor-semiconductor APDs (1989), and micro-well APDs (2005). The recent development of tip avalanche photodiodes (2020) based on the spherical p–n junction eliminates the trade-off, outperforms the planar SiPMs in the photon detection efficiency, and opens new opportunities for SiPM improvements. Furthermore, the latest developments in APDs based on electric field-line crowding and charge-focusing topology with quasi-spherical p–n junctions (2019–2023) show promising functionality in linear and Geiger operating modes. This paper presents an overview of designs and performances of non-planar APDs and SiPMs.

show abstract

Section: Non-planar Apd and Sipm Designsmentioning

confidence: 99%