2024
DOI: 10.1021/acsanm.3c05517
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TiO2 Quantum Dots/Fe3S4 Heterojunction Nanocomposites for Efficient Ammonia Production through Nitrogen Fixation upon Simulated Sunlight

Khadijeh Pournemati,
Aziz Habibi-Yangjeh,
Alireza Khataee

Abstract: Using semiconductor photocatalysts instead of the traditional Haber−Bosch procedure to produce ammonia is a promising strategy to save energy and prevent environmental pollution. Therefore, finding a suitable photocatalyst with high efficiency and stability has become one of the big challenges of research communities in the field of heterogeneous photocatalysis. Herein, S-scheme TiO 2 quantum dots (QDs)/Fe 3 S 4 heterojunction photocatalysts were synthesized through a hydrothermal route. The nitrogen photofixa… Show more

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Cited by 8 publications
(4 citation statements)
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“…The TiO 2 OVs, TiO 2 QDs, and Cu 5 FeS 4 are n-type, n-type, and p-type semiconductors, respectively. So, in the first two semiconductors, the Fermi levels ( E F ) are close to the CB, and in the later one, the E F is close to the VB. ,, After integration of TiO 2 QDs, TiO 2 OVs, and Cu 5 FeS 4 , double S-scheme hetero/homo junctions are formed between them. The electron transfer takes place from the semiconductor having a more negative E F .…”
Section: Resultsmentioning
confidence: 99%
“…The TiO 2 OVs, TiO 2 QDs, and Cu 5 FeS 4 are n-type, n-type, and p-type semiconductors, respectively. So, in the first two semiconductors, the Fermi levels ( E F ) are close to the CB, and in the later one, the E F is close to the VB. ,, After integration of TiO 2 QDs, TiO 2 OVs, and Cu 5 FeS 4 , double S-scheme hetero/homo junctions are formed between them. The electron transfer takes place from the semiconductor having a more negative E F .…”
Section: Resultsmentioning
confidence: 99%
“…The S-scheme mechanism is proposed on the basis of the energy band structure over TQDs/TOVs/C-dots photocatalysts, as depicted in Figure c. The energy gaps and energy band positions for TiO 2 QDs and TiO 2 OVs semiconductors have been calculated from Mott–Schottky analyses in our previous work. , When the type-II heterojunction is established between the components, electrons are transferred from the conduction band (CB) of TiO 2 QDs to that of TiO 2 OVs and holes are transferred from the valence band (VB) of TiO 2 OVs to that of TiO 2 QDs. Although the segregation of electrons from holes occurs efficiently in a type-II heterojunction system, the movement of electrons and holes is associated with coulombic repulsion force .…”
Section: Resultsmentioning
confidence: 99%
“…However, the efficiency of this process still has a wide gap compared to that of the Haber-Bosch one due to the difficulty of N 2 activation and the quick recombination of photo-generated carriers [11][12][13]. The strategies of innovative fabrication for functional material design, including defect and dopant engineering, heterojunction construction by integrating a semiconductor and metal or another semiconductor, reactive crystal facet exposure and so on, have been widely explored [14][15][16][17]. The purpose mainly focuses on the functionality that not only facilitates the separation of photo-excited electrons and holes but also provides more N 2 activation sites for solar-to-ammonia conversion.…”
Section: Introductionmentioning
confidence: 99%