2014
DOI: 10.1021/cr400629p
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TiO2Nanoparticles as Functional Building Blocks

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Cited by 431 publications
(270 citation statements)
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References 508 publications
(903 reference statements)
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“…[32] A precursor solution containing an equimolar amount of Si(OEt) 4 and Ti(OiPr) 4 yielded NP assemblies with a beautiful hollow spherical morphology as expected (Entry 4 in Table 1 and Figure 1d). Similar reactions of precursor solutions containing low amounts of Si(OEt) 4 also resulted in composite NP assemblies with hollow spherical morphology (Entries 2 and 3 in Table 1 and Figure 1b and 1c). However, higher amounts of Si(OEt) 4 resulted in a very low product yield (Entries 5 and 6 in Table 1 and Figure 1e and 1f ).…”
Section: Resultssupporting
confidence: 62%
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“…[32] A precursor solution containing an equimolar amount of Si(OEt) 4 and Ti(OiPr) 4 yielded NP assemblies with a beautiful hollow spherical morphology as expected (Entry 4 in Table 1 and Figure 1d). Similar reactions of precursor solutions containing low amounts of Si(OEt) 4 also resulted in composite NP assemblies with hollow spherical morphology (Entries 2 and 3 in Table 1 and Figure 1b and 1c). However, higher amounts of Si(OEt) 4 resulted in a very low product yield (Entries 5 and 6 in Table 1 and Figure 1e and 1f ).…”
Section: Resultssupporting
confidence: 62%
“…Precursor solutions containing Si(OEt) 4 , Ti(OiPr) 4 , and ophthalic acid in methanol (MeOH) were heated up to 300°C at a heating rate of 5.4°C/min (Table 1), where the existence of o-phthalic acid and slow heating are necessary for the fabrication of the hollow structure through Ostwald ripening as discussed in a previous paper. [32] A precursor solution containing an equimolar amount of Si(OEt) 4 and Ti(OiPr) 4 yielded NP assemblies with a beautiful hollow spherical morphology as expected (Entry 4 in Table 1 and Figure 1d). Similar reactions of precursor solutions containing low amounts of Si(OEt) 4 also resulted in composite NP assemblies with hollow spherical morphology (Entries 2 and 3 in Table 1 and Figure 1b and 1c).…”
Section: Resultsmentioning
confidence: 99%
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“…This feature becomes even more visible under illumination. This Ti 3+ center can be described by orthorhombic g values [1.990 1.929 1.909], with a considerable distribution in the g strain contribution which is significantly different from the typically observed Ti 3+ centers found in the reduced titania [36,37].Overall the PL and EPR findings strongly support that a main electronic effect of p + -implantation is the creation of paramagnetically active recombination states that are close to the band gap of the anatase. Such features were also observed for high pressure hydrogenated anatase, where they have been identified as a key indicator for establishing intrinsic H 2 evolution ability in TiO 2 [20,21].…”
mentioning
confidence: 83%
“…This feature becomes even more visible under illumination. This Ti 3+ center can be described by orthorhombic g values [1.990 1.929 1.909], with a considerable distribution in the g strain contribution which is significantly different from the typically observed Ti 3+ centers found in the reduced titania [36,37].…”
mentioning
confidence: 99%