TiO<sub>2</sub>-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Chou, Bo Yi; Lee, Ching Sung; Yang, Cheng; Hsu, Wei Chou; Liu, Han Yin; Chiang, Meng Hsueh; Sun, Wen Ching; Wei, Sung Yen; Sheng, Yu Jane

doi:10.1109/led.2014.2354643

Cited by 24 publications

(9 citation statements)

References 10 publications

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“…Many high- k materials such as Al 2 O 3 [10], ZrO 2 [11], MgO [12], and TiO 2 [13] have been investigated for GaN-based MOS capacitors. Among them, ZrO 2 is attractive because it has a high permittivity (~24), large bandgap (5.8 eV), and more importantly, an appropriate value of band offset with GaN (valance band offset ~1.6 eV, conduction band offset ~1.1 eV) [14].…”

Section: Introductionmentioning

confidence: 99%

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

et al. 2017

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GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10−9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

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Section: Introductionmentioning

confidence: 99%

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

et al. 2017

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“…Comparable I DSS0 densities were observed for samples B and C. The I DSS0 improvements are mainly attributed to the surface passivation effect. The comparison of Hall data before/after TiO 2 passivation in our preliminary report [20] indicates the channel conductivity is increased after passivation. Nevertheless, sample C has the demonstrated the highest I DS,max .…”

Section: A Interface and Dielectric Characterizationsmentioning

confidence: 80%

“…It consists of a 24-nm thick Al 0.25 Ga 0.75 N barrier, a 300-nm thick GaN channel, and a 4-μm carbon-doped GaN buffer. Standard photolithography and device fabrication [20] were used for the conventional Schottky-gated AlGaN/GaN HFET (sample A). The USPD technique was performed after/before the gate deposition to form the TiO 2 layer for the passivated HFET/MOS-HFET (sample B/C), respectively.…”

Section: Materials Growth and Device Fabricationmentioning

confidence: 99%

“…The ultrasonic spray pyrolysis deposition (USPD) technique possessing high deposition rate, nonvacuum environment, and suitability for largearea deposition has been reported [18], [19] for fabricating Al 2 O 3 -passivated HFETs. A preliminary study for fabricating a TiO 2 -dielectric MOS-HFET using USPD was made [20]. This paper presents comprehensive and comparative studies for TiO 2 -passivated AlGaN/AlN/GaN HFETs and TiO 2 -dielectric MOS-HFETs using the USPD technique.…”

mentioning

confidence: 99%

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Investigations of TiO₂–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

Lee

Hsu

Chou

et al. 2015

IEEE Trans. Electron Devices

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Comparative studies for TiO 2 -passivated Al 0.25 Ga 0.75 N/GaN heterostructure FETs (HFETs) and TiO 2 -dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the layer thickness of TiO 2 to 20 nm. High relative permittivity (k) of 53.6 and thin effective oxide thickness of 1.45 nm are also obtained. Pulse-IV, Hooge coefficient (α H ), Transmission Electron Microscopy, and atomic force microscope have been performed to characterize the interface, atomic composition, and surface flatness of the TiO 2 oxide. Superior improvements for the present TiO 2 -dielectric MOS-HFET/TiO 2 -passivated HFETs are obtained, including 47.6%/23.8% in two-terminal gate-drain breakdown voltage (BV GD ), 111%/22.2% in two-terminal gate-drain turn-ON voltage (V ON ), 47.9%/39.4% in ON-state breakdown (BV DS ), 12.2%/10.2% in drain-source current density (I DS ) at V GS = 0 V (I DSS0 ), 27.2%/11.7% in maximum I DS (I DS,max ), 3/1-order enhancement in ON/OFF current ratio (I ON /I OFF ), 58.8%/17.6% in gate-voltage swing linearity, 25.1%/13.2% in unity-gain cutoff frequency ( f T ), 40.6%/24.7% in maximum oscillation frequency ( f max ), and 33.8%/15.6% in power-added efficiency with respect to a Schottky-gated HFET fabricated on the identical epitaxial structure. The present MOS-HFET has also shown stable electrical performances when the ambient temperature is varied from 300 to 450 K. Index Terms-AlGaN/GaN/Si, high temperature, MOS-heterostructure FET (HFET), passivation, TiO 2 , ultrasonic spray pyrolysis deposition (USPD).

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“…Metal-insulator-semiconductor HEMTs (MIS-HEMTs) are highly preferred over Schottky-gate HEMTs for high-voltage power switches, owing to the suppressed gate leakage and enlarged gate swing. Various dielectric materials were adopted for the gate insulator, such as aluminium oxide deposited by atomic layer deposition (ALD) [4][5][6], PECVD-silicon nitride (SiN x ) [7], PE-ALD SiN x [8], titanium oxide deposited by non-vacuum ultrasonic spray pyrolysis [9] and cerium oxide [10] films deposited by radio-frequency sputtering. However, it remains challenging to obtain low and stable gate leakage characteristics and suppress current collapse effects simultaneously.…”

mentioning

confidence: 99%

16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si ₃ N ₄ as gate insulator

Zhang

Tan

et al. 2015

Electron. lett.

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An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) on Si substrate was obtained with 18 nm silicon nitride (Si 3 N 4) grown by low-pressure chemical vapour deposition (LPCVD) as the gate insulator. The D-mode MIS-HEMT shows a high I dss of 16.8 A at V g = 3 V, a high breakdown voltage (BV) of 600 V and a low-specific on-resistance of 2.3 mΩ•cm 2. The power device figure of merit (FOM = BV 2 /R on,sp) is calculated as 157 MW•cm −2. The good insulation effects of LPCVD-Si 3 N 4 were also demonstrated by the low gate leakage current of 154 nA at V ds = 600 V and V gs = −14 V. Furthermore, an E-mode device was realised by a low-voltage silicon metal-oxidesemiconductor field-effect transistor in series; the V th was determined to be 2.6 V. The high I dss , low-specific on-resistance, high BV and positive V th show the potential and advantages of GaN MIS-HEMTs for power switching applications. BE2013002-2) and by the Jiangsu Science and Technology Support Program (grant no. BE2012079). We thank the Suzhou nanofabrication facility of SINANO, CAS, for the fabrication, characterisation and testing of the AlGaN/GaN MIS-HEMT.

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TiO₂-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Cited by 24 publications

References 10 publications

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Investigations of TiO₂–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si ₃ N ₄ as gate insulator

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TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Cited by 24 publications

References 10 publications

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Investigations of TiO2–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si 3 N 4 as gate insulator

Contact Info

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TiO₂-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Investigations of TiO₂–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si ₃ N ₄ as gate insulator