2016
DOI: 10.1021/acscentsci.5b00402
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TiO2/BiVO4 Nanowire Heterostructure Photoanodes Based on Type II Band Alignment

Abstract: Metal oxides that absorb visible light are attractive for use as photoanodes in photoelectrosynthetic cells. However, their performance is often limited by poor charge carrier transport. We show that this problem can be addressed by using separate materials for light absorption and carrier transport. Here, we report a Ta:TiO2|BiVO4 nanowire photoanode, in which BiVO4 acts as a visible light-absorber and Ta:TiO2 acts as a high surface area electron conductor. Electrochemical and spectroscopic measurements provi… Show more

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Cited by 272 publications
(187 citation statements)
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References 61 publications
(132 reference statements)
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“…4b). The result is consistent with a type II band alignment between LTO and g-C 3 N 4 , since the gap between V fb and bottom edge of the conduction band (CB) is assumed to be small (∼0.2 eV) and similar for LTO and g-C 3 N 4 [41]. In type II heterostructure band alignment, the position of CB and valence band (VB) of g-C 3 N 4 is both higher than that of LTO.…”
Section: Band Alignment Of G-c 3 N 4 /Nltosupporting
confidence: 83%
See 1 more Smart Citation
“…4b). The result is consistent with a type II band alignment between LTO and g-C 3 N 4 , since the gap between V fb and bottom edge of the conduction band (CB) is assumed to be small (∼0.2 eV) and similar for LTO and g-C 3 N 4 [41]. In type II heterostructure band alignment, the position of CB and valence band (VB) of g-C 3 N 4 is both higher than that of LTO.…”
Section: Band Alignment Of G-c 3 N 4 /Nltosupporting
confidence: 83%
“…The band bending at the interface of type II heterojunction due to the difference of potential energies between NLTO and g-C 3 N 4 induces a built-in field (Fig. 6b), which promotes the electron-hole pair to facilely migrate to the opposite directions [41]. The large interfacial area of 2D layered g-C 3 N 4 /NLTO composite results in sufficient interface for efficient charge transfer to generate an excellent type II heterojunction.…”
Section: Charge Transfer On G-c 3 N 4 /Nltomentioning
confidence: 99%
“…[133] Several studies also report on morphologye ngineering of WO 3 :BiVO 4 to achieve better PEC performance. [138,139] Ar ecent report by Singh et al sheds light on the band engineering of TiO 2 :BiVO 4 ,w hich predicts at ransition from the type Ia lignment to the most efficient type II alignment. [135,136] Thereh ave been severala ttempts to improve the PEC performance of BiVO 4 by its coupling with [130] Reproduced from Ref.…”
Section: Heterojunctionmentioning
confidence: 99%
“…In recent years, one-dimensional (1D) nanomaterials have attracted great attention in materials science [1][2][3][4][5][6][7][8][9][10] . In particular, 1D metal nanowires with an ordered mesostructure and a high surface area have been intensively investigated because of their unique size-and shape-dependent electronic, magnetic and optical properties [11][12][13][14][15][16][17][18][19] .…”
Section: Introductionmentioning
confidence: 99%