Tin oxide artificial synapses for low power temporal information processing

Abstract

Lateral memristors configured with inert Pt contacts and mixed phase tin oxide layers have exhibited immediate, forming-free, low-power bidirectional resistance switching. Activity dependent conductance and relaxation in the low resistance state resembled short term potentiation in biological synapses. After scanning probe microscopy, x-ray photoelectron spectroscopy and electrical measurements, the device characteristics were attributed to Joule heating induced decomposition of the minority SnO phase and formation of a SnO2 conducting filament with higher effective n-type doping. Finally, the devices recognized input voltage pulse sequences and spectral data by returning unique conductance states, suggesting suitability for bio-inspired pattern recognition systems.

Electroformed, Self‐Connected Tin Oxide Nanoparticle Networks for Electronic Reservoir Computing

“…[10] Tin oxide is a low-cost semiconducting material with proven applications including high performance transparent field effect transistors [11,12] , gas sensors [13] and, recently, resistive switching devices. [14][15][16] In addition to non-volatile resistive switching which has been attributed to electromigration of oxygen vacancies [14] , the conductivity of SnO x can also be widely modulated by Joule heating. This is due to the well-known temperature-driven disproportionation reaction [17] ,…”

“…Sn-centres produced after this reaction are n-type dopants in SnO 2 and cause significantly increased electrical conductivity. This mechanism has been exploited in nanoscale resistive switching devices formed on SnO x with high-and low-resistance states separated by more than three orders of magnitude [16] . The low-resistance states (LRS) in these devices were volatile.…”

“…Relaxation to the initial high resistance state was attributed to backdiffusion of oxygen and re-oxidation of the Sn-centres that formed conduction path(s) in the LRS. Temporal information processing was made possible by this mechanism and volatility [16] .…”

Ultrasonic Spray Pyrolysis of Antimony‐Doped Tin Oxide Transparent Conductive Coatings

“…The decomposition of SnO impurities at similar annealing temperatures has also been observed previously. [33] It is worth noting that films of good optical quality can still be obtained at temperatures below 400 °C, however at least ≈300 °C was required to obtain dense and structurally robust coatings. In fact, at lower temperatures the precursors do not fully decompose, and flaky salt residues are observed on the coating surface.…”

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

“…In particular, metal oxide-based materials such as AlO x , NiO x , TiO x and HfO x are currently extensively discussed because of the simplicity of the material [10,12,13,14]. Among these materials, AlO x has been widely applied in gate insulator layers [15,16,17,18] and has attracted extensive attention in the RRAM field owing to its wide band gap (~8.9 eV), high thermal stability with Si and Pt, high dielectric constant (~8) and large breakdown electric field [10,14,19,20,21,22] as Kim et al has reported [19,20,23,24,25,26]. In addition, the superior elasticity [27] and high toughness [28] make it possible for AlO x to be applied under various conditions including vibration and pressure environments [29,30,31].…”