Tin dioxide thin films prepared from a new alkoxyfluorotin complex including a covalent SnF bond

Cachet, H.; Gamard, A.; Campet, G.; Jousseaume, B.; Toupance, Thierry

doi:10.1016/s0040-6090(01)00838-0

Cited by 53 publications

(18 citation statements)

References 28 publications

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“…Crystallographic data as well as band structure calculations of these materials had also been reported in various literatures [90,97,98]. Preparation of some other highly resistive (w10 6 …”

mentioning

confidence: 83%

Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

Banerjee¹,

Chattopadhyay²

2005

Progress in Crystal Growth and Characterization of Materials

334

166

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mentioning

confidence: 83%

Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

Banerjee¹,

Chattopadhyay²

2005

Progress in Crystal Growth and Characterization of Materials

334

166

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“…The doped SnO 2 , due to its wide band gap (3.67 eV), high optical transmittance in the visible range and good substrate adherence, has many potential applications such as gas sensors [6], solar energy conversion [7], infrared-reflecting glass [8], antistatic coatings [9] and transparent electrode preparation [10,11]. F [12], Sb [13], Ni [14], Co [15], Mn [16], etc., have been used as dopants for SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

Preparation, characterization and electrical properties of fluorine-doped tin dioxide nanocrystals

Yuan

Shi

et al. 2010

Journal of Colloid and Interface Science

114

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“…15 The preparation of undoped or antimony-doped Sn0 2 films by the sol-gel method is rather well-documented. 24 ' 25 Semiconducting fluorine containing tin dioxide thin films have also been prepared by spin-coating and spray-pyrolysis from alkoxyfluorobis(ßdiketonato)tins l. 26 However, very few reports have been addressed to the preparation of sol-gel F:SnO; materials, 21 likely due to a lack of a suitable precursor.…”

Section: Introductionmentioning

confidence: 99%

Fluorinated Organotins as Precursors of F-Doped Tin Dioxide

Boutet¹,

Gamard²,

Jousseaume³

et al. 2002

Main Group Metal Chemistry

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Alkoxyfluorodi(ß-diketonato)tins 1, trialkynyl(fluoroorgano)tins 2 and difluorodi(ß-diketonato)tin 3 have been synthesised in order to prepare F-doped tin dioxide materials by the sol-gel route. After hydrolysis and densification in air at 550°C, these compounds lead to nanocrvstalline tin dioxide powders containing the required amount of doping fluorine (4-8 at%) and exhibiting a resistivity at least two times lower than that reported for similar tin dioxide materials. In the case of 2, thermally induced β-or γ-elimination reactions were evidenced by TG/MS, allowing the insertion of fluorine into the oxide network and the clean removal of the undesirable organics. The characterisation of sol-gel thin films prepared from 1 and 3 are also described. They exhibit excellent optical transparencies but resistivities (p > 7 10" Q.cm) lower than those of thin layers prepared by pyrosol deposition from S11CI4-NH4F mixtures (p < 10 3 Q.cm). The presence of polluting carton and the porosity of the sol-gel films are thought to be responsible for these resistivities.

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Tin dioxide thin films prepared from a new alkoxyfluorotin complex including a covalent SnF bond

Cited by 53 publications

References 28 publications

Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

Preparation, characterization and electrical properties of fluorine-doped tin dioxide nanocrystals

Fluorinated Organotins as Precursors of F-Doped Tin Dioxide

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