Tin Dioxide Nanowires: Evolution and Perspective of the Doped and Nondoped Systems

Samal, Monica; Yi, Dong Kee

doi:10.1080/10408436.2012.684806

Cited by 7 publications

(2 citation statements)

References 199 publications

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“…[25][26][27][28] Jiang et al successfully synthesized a polycrystalline SnO 2 nanowire using this process. 25,29 The SnO 2 nanowire was mainly applied as a gas sensor and exhibited excellent performance. 30 Although the polyol process is simple and easy to scale up, using it to directly apply the as-synthesized nanowire to a device is difficult.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanism of SnC₂H₄O₂ nanowires prepared by the polyol process as SnO₂ precursor nanowires

Park

Lee

2019

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

Growth mechanism of SnC₂H₄O₂ nanowires prepared by the polyol process as SnO₂ precursor nanowires

Park

Lee

2019

RSC Adv.

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“…An SnO 2 semiconducting nanowire is an important material for use in a nanoelectronic device. 26 These semiconductor nanowires of desirable properties can be achieved through a bottom-up approach to the controlled synthesis in a doped state. Lightly Sb-doped SnO 2 nanowires were grown on a Si(100) substrate covered with a 10 nm thick deposited Au film by using the vapor-liquid-solid (VLS) growth mechanism.…”

Section: Methodsmentioning

confidence: 99%

Mobility enhancement of SnO₂nanowire transistors gated with a nanogranular SiO₂solid electrolyte

Sun

Huang

Qian

et al. 2014

Phys. Chem. Chem. Phys.

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Field-effect transistors (FETs) based on semiconducting nanowires are the most fundamental electronic elements for exploring charge transport as well as possible applications in functional nanoelectronics. Here, we report the effect of different gate dielectrics on the electrical performance of SnO2 nanowire FETs. By using solid-electrolytes with large electric-double-layer (EDL) capacitance as gate dielectrics, both low-voltage operation and high gating efficiency can be obtained. Electrical transport measurements indicate that the nanowire FETs gated by solid-electrolytes show improved electrical performances in terms of on-current, sub-threshold swing, and mobility, in comparison to those gated by traditional thermally grown dielectrics. The observed performance improvement is possibly due to the reduction of the contact-resistance and the Schottky barrier at the semiconductor/metal junctions.

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Three‐Dimensional SnO₂ Nanowire Networks for Multifunctional Applications: From High‐Temperature Stretchable Ceramics to Ultraresponsive Sensors

Paulowicz

Hrkac

Kaps

et al. 2015

Adv Elect Materials

123

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effectively used for multifunctional applications ranging from light-weight space technologies, high-temperature fl exible sensors to stretchable implants on or into human bodies. [ 1b , 5 ] The utilization of Q1D nanostructures from metal oxide semiconductors (ZnO, Fe 2 O 3 , Al 2 O 3 , TiO 2 , etc.) as building units of macroscopic 3D networks is advantageous due to the fact that mechanical fl exibility and excellent electrical/sensing properties [ 3a , 4a , 6 ] of these Q1D nanostructures may be additionally implemented in the 3D networks. The successful fabrication of such multifunctional 3D networks is still a very challenging task and simply not possible with every nanowire synthesis technique. A variety of growth methods starting from conventional vapor-liquid-solid [ 7 ] to advanced lithography [ 8 ] techniques has been utilized for synthesizing the Q1D nanostructures from several metal oxides in different forms, but they still lack with key issues, e.g., appropriate integration, formation of fl exible networks, and others with regard to device applications. To overcome latter integration diffi culties, different strategies for direct fabrication of Q1D nano-and microstructures on microchips have been investigated and the corresponding devices have demonstrated high performances, too. [ 9 ] The 3D fl exible networks made from Q1D nanostructures, in this context, could become better alternates for an easy and direct realization of applications based on the nanoscale materials. However, typical availability of simple, cost-effective, and versatile synthesis techniques of fl exible networks, which is an equally important aspect amongst other listed above, is still not reported extensively.For the fabrication of macroscopic 3D interconnected nanowire networks, some advanced and multistep fabrication techniques have already been utilized. [ 10 ] Although these methods have shown their abilities to fabricate macroscopic 3D networks, they still involve high cost and complex synthesis steps which limit the mass scale production of such networks and hence their appropriate applications. In this regard, the fl ame transport synthesis (FTS) [ 4b ] approach demonstrated an enormous potential for metal oxide nanostructuring in a versatile and cost-effective manner. Structures ranging from singlecrystal ZnO nanoscale rods to centimeter size 3D interconnected network consisting of ZnO nano-and microtetrapods have been successfully synthesized by the FTS approach. The 3D networks have shown various possible and very promising applications in different fi elds. [ 11 ]

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Tin Dioxide Nanowires: Evolution and Perspective of the Doped and Nondoped Systems

Cited by 7 publications

References 199 publications

Growth mechanism of SnC₂H₄O₂ nanowires prepared by the polyol process as SnO₂ precursor nanowires

Growth mechanism of SnC₂H₄O₂ nanowires prepared by the polyol process as SnO₂ precursor nanowires

Mobility enhancement of SnO₂nanowire transistors gated with a nanogranular SiO₂solid electrolyte

Three‐Dimensional SnO₂ Nanowire Networks for Multifunctional Applications: From High‐Temperature Stretchable Ceramics to Ultraresponsive Sensors

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Tin Dioxide Nanowires: Evolution and Perspective of the Doped and Nondoped Systems

Cited by 7 publications

References 199 publications

Growth mechanism of SnC2H4O2 nanowires prepared by the polyol process as SnO2 precursor nanowires

Growth mechanism of SnC2H4O2 nanowires prepared by the polyol process as SnO2 precursor nanowires

Mobility enhancement of SnO2nanowire transistors gated with a nanogranular SiO2solid electrolyte

Three‐Dimensional SnO2 Nanowire Networks for Multifunctional Applications: From High‐Temperature Stretchable Ceramics to Ultraresponsive Sensors

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Growth mechanism of SnC₂H₄O₂ nanowires prepared by the polyol process as SnO₂ precursor nanowires

Growth mechanism of SnC₂H₄O₂ nanowires prepared by the polyol process as SnO₂ precursor nanowires

Mobility enhancement of SnO₂nanowire transistors gated with a nanogranular SiO₂solid electrolyte

Three‐Dimensional SnO₂ Nanowire Networks for Multifunctional Applications: From High‐Temperature Stretchable Ceramics to Ultraresponsive Sensors