TiN diffusion barriers for copper metallization

Baumann, J.; Werner, T.; Ehrlich, Andreas; Rennau, M.; Kaufmann, Ch.; Geßner, Thomas

doi:10.1016/s0167-9317(97)00115-9

Cited by 31 publications

(23 citation statements)

References 14 publications

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“…However, the challenges of Cu integration are that Cu shows poor adhesion to oxide and most dielectric materials, rapidly diffuses into SiO 2 and Si, and easily react with Si at a temperature as low as 200 • C to form Cu-Si compounds [4,[6][7][8]. Therefore, an appropriate barrier layer between Cu and SiO 2 or Si is necessary in order to prevent the inter-diffusion between Cu and Si.…”

Section: Introductionmentioning

confidence: 99%

“…Generally, a good barrier layer should have high thermal stability, low resistivity and fine adhesion with Cu and Si. Hence, many refractory metals and their nitrides, such as W and WN [9][10][11], Ti and TiN [7,[11][12][13][14], Ta and TaN [3,5,6,[15][16][17], have been chosen as potential diffusion barriers for Cu interconnects because of their excellent thermal stability and good electrical conductivity. Recently, the tantalum nitride (TaN) film has been widely studied in silicon devices as a diffusion barrier for Cu metallization due to its relative good barrier effect and stable structure [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

Zhou

Xie

2014

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

Zhou

Xie

2014

Applied Surface Science

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“…[2][3][4] As the feature sizes of ULSI devices have shrunk, physical vapor deposition for such applications has been replaced by chemical vapor deposition ͑CVD͒, because of the increased conformability of the film as compared with PVD films. However, this shrinkage causes various problems in device performance and reliability.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Hsu

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Ultrathin (10nm) Ti films with various structures were deposited by physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. CVD-Ti films with low-temperature(<500°C) plasma-enhanced chemical vapor deposition using TiCl4 and H2 as reactants is an amorphous structure. This result is different from PVD-Ti films deposited by magnetron sputtering, which have a columnar structure. Ammonia plasma was further employed to post-treat the CVD-Ti barrier layer to improve barrier properties. An amorphous Ti(N,H) layer was formed on the surface of the CVD-Ti layer after ammonia plasma post-treatment. The resultant films had a bilayered amorphous Ti(N,H)∕Ti structure. Furthermore, the effective resistivity of the resultant Ti(N,H)∕Ti film decreased to 122μΩcm. The thermal stability of Cu∕PVD-Ti∕Si and Cu∕CVD-Ti∕Si contact systems was evaluated by thermal stressing at various annealing temperatures. For the Cu∕PVD-Ti∕Si, the highly copper titanium compound was formed after 450°C annealing. The PVD Ti barrier failed initially due to the reaction of Cu and the Ti barrier, in which Cu atoms penetrated into the Si substrate after annealing at high temperature. However, no copper-titanium and copper-silicide compounds were found for amorphous Ti and plasma-treated Ti[Ti(N,H)∕Ti] barriers, even after annealing at 500 and 600°C, respectively. Improved barrier capability against Cu diffusion was found for the Ti(N,H)∕Ti barrier layer because the Cu∕Ti(N,H)∕Ti∕n+-p junction diodes retained low leakage current densities even after annealing at 500°C for 1h. Ti(N,H)∕Ti barrier layers present lengthened grain structures to effectively impede Cu diffusion, thus acting as much more effective barriers than conventional Ti and TiN films.

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“…It is widely used as a wear resistant coating on tooling as it possesses favourable tribological properties such as high hardness and a low friction coefficient. TiN is also a CMOS compatible material and has been used as a diffusion barrier in microelectronic applications 1 . Being CMOS compatible and possessing favourable mechanical properties make TiN a potential candidate for surface micromachined MEMS in applications such as sensors and actuators.…”

Section: Introductionmentioning

confidence: 99%

Selective wet-etching of filtered-arc-deposited TiN films on Cr sacrificial layers

et al. 2004

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Titanium Nitride (TiN) is a wear resistant and complementary metal oxide silicon (CMOS) compatible material that is increasingly being investigated for MEMS applications. Incorporating any new material into a MEMS device requires the development of a processing strategy. This paper discusses a wet-etching strategy for patterning and releasing TiN features on Cr sacrificial layers. Filtered arc TiN films were deposited onto Cr coated Si (100) substrate. A Cr contact mask was sputtered over the TiN and patterned using UV photolithography. Patterned TiN features were examined using scanning electron microscopy (SEM). Rutherford Backscattering Spectroscopy (RBS) was carried out to investigate the selective etching of TiN and Cr in their respective etchants, which consisted of SC-1 for etching the TiN and a commercial chromic acid solution for etching the Cr. The results showed that Cr was not etched by SC-1 and that TiN was not etched by the Cr etchant.

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TiN diffusion barriers for copper metallization

Cited by 31 publications

References 14 publications

Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect

Selective wet-etching of filtered-arc-deposited TiN films on Cr sacrificial layers

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