Tin and Iron Impurity Atom States in Modified As₂Se₃ Films

Abstract

Electrical and optical properties of amorphous As2Se, films modified by tin (a non-transition metal) and iron (a transition metal) as well as the state of the modifying impurity atoms are investigated. Tin is found electrically inactive in the modified films like in vitreous As2Se3. Iron in the modified films is shown to form donor centers with the ionized and neutral states corresponding to the Fe3+ and Fez + ions, respectively. A conclusion is made that an electrical activity of impurities in the chalcogenide semiconductors modified films results from the chemical nature of modifiers whereas the rf co-sputtering technique provides their high concentration only.a TaKXe COCTORHUe MOAU@HUHpyK)WX IIpUMeCHbIX BTOMOB. YCTaHOBJIeHO, YTO OJIOBO B MOAU@U~UpOBaHHbIX nJIeHKaX 3JIeKTpUSeCKU HeaKTBBHO, KBK € i B CTeKJIOO6pa3HOM As,Se,. XeJIe30 o6pa3ye~ B nJIeHKaX As2Se3 AOHOpHbIe GeHTPbI, UOHK30BaHHOMY COCTOIIHEIK) KOTOpbIX COOTBeTCTByeT UOH Fe3 + , a He8TPaJlbHOMY Fez + . CAeJIaH BbIBOA, YTO 3JIeKTpUYeCKaX BKTUBHOCTb IIpHMeCeg B MOAA@U~UPOBaHHbIX IIJIeHKaX XaJIbKOreHWHbIX nOJIyIIpOBOAHUKOB CBR3aHa C XEMUYeCKO~ npUpOAOfi MOAU@UKaTOpa, a MeTOA BY PaCl' IbIfieHUX 0 6 e c n e~u~a e~ TOJIbKO er0 BbICOKYK) KOHUeHTpaUUEO.modified films is not clearly understood, too.The aim of this work is a comparison of the properties of the typical vitreous semiconductor As$, doped with a non-transition metal (tin) by melting and by the modifying technique, on the one hand, and of the iron modified As,Se, films, on the other hand, as well as the determination of the conductivity mechanism of the iron modified As,Se, films. ExperimentalBulk As,Se, was doped with tin by alloying As,Se, with metallic tin in evacuated quartz ampoules. The melt has been kept at 950 "C for 4 h under permanent vibrational stirring ') Politekhnicheskaya 26, SU-194021 Leningrad, USSR.

Electronic exchange between centres of iron in the vitreous arsenic selenide

“…Later, we undertook studies of both the nature of the electrical activity of iron (Marchenko, Luzhkov, Rasnyuk et al 2017;Marchenko, Terukov, Egorova et al 2017) and the mechanism of electrical activity of the different states of iron in As 2 Se 3 (Bobokhuzhaev, Rabchanova, Seregin, Shaldenkova 2015;Marchenko, Rabchanova, Seregin et al 2016). In this paper, we consider all the results we obtained (Bobokhuzhaev, Rabchanova, Seregin, Shaldenkova 2015;Marchenko, Rabchanova, Seregin et al 2016;Marchenko, Luzhkov, Rasnyuk et al 2017, Marchenko, Terukov, Egorova et al 2017Marchenko, Nasredinov, Seregin 2018;Turaev, Seregin, Nasredinov 1990) from a single perspective.…”

“…The fundamental property of the electrical inactivity of impurity atoms in chalcogenide glassy semiconductors is well-known (Marchenko, Nasredinov, Seregin 2018), although exceptions are known for some impurities. In particular, the electrical activity of iron impurity atoms was discovered in glassy films of arsenic selenide back in 1990 (Turaev, Seregin, Nasredinov 1990). Later, we undertook studies of both the nature of the electrical activity of iron (Marchenko, Luzhkov, Rasnyuk et al 2017;Marchenko, Terukov, Egorova et al 2017) and the mechanism of electrical activity of the different states of iron in As 2 Se 3 (Bobokhuzhaev, Rabchanova, Seregin, Shaldenkova 2015;Marchenko, Rabchanova, Seregin et al 2016).…”