Time, Space, and Force Considerations for a Joint Force Commander's Air Operations in a Counterinsurgency

Lewis, Frederick L.

doi:10.21236/ada503164

Cited by 1 publication

(1 citation statement)

References 2 publications

(2 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Once the HC crystals melt, liquid HC plasticizes the TR. Since the T g of HC20 is reported as −116 °C and the T g of the TR is 74 °C, the T g of the 50/50 w/w HC20/TR mixture can be estimated from the Fox–Flory equation to be −57 °C, in which case the matrix with the highest TR concentration (in Figure a) remains liquid-like at T m . This state is illustrated in the bottom panel of Figure .…”

Section: Resultsmentioning

confidence: 99%

Phase-Change Thermoplastic Elastomer Blends for Tunable Shape Memory by Physical Design

Mineart

Tallury

et al. 2016

Ind. Eng. Chem. Res.

View full text Add to dashboard Cite

Intelligent polymeric materials are of increasing interest in contemporary technologies due to their low cost, light weight, facile processability, and inherent ability to change properties, shape, and/or size upon exposure to an external stimulus. In this study, we consider thermally programmable shape-memory polymers (SMPs), which typically rely on chemistry-specific macromolecules composed of two functional species. An elastic, network-forming component permits stretched polymer chains to return to their relaxed state, and a switching component affords at least one thermal transition to regulate fixation of a desired strain state and return to a previous strain state. Here, we produce designer shape-memory materials by combining thermoplastic elastomeric triblock copolymers with a midblock-selective phase-change additive, thereby yielding shape-memory polymer blends (SMPBs). These materials not only exhibit tunable switch points but also controllable recovery kinetics. We further highlight the versatility of SMPBs through laminate welding for intermediate multishape fabrication and liquid metal inclusion for shape-memory electronics.

show abstract

Section: Resultsmentioning

confidence: 99%