1983
DOI: 10.1063/1.93880
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Time-resolved x-ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

Abstract: Nanosecond resolution time-resolved x-ray diffraction measurements have been used to study the temperature and temperature gradients in 〈100〉 and 〈111〉 oriented silicon crsytals during pulsed laser annealing. Thermal strain analysis of time-resolved extended Bragg scattering has shown the lattice temperature to reach the melting point during 15-ns, 1.5-J/cm2 ruby laser pulses and to remain at the melting point during the high reflectivity phase (HRP). The temperature gradients at the liquid-solid interface wer… Show more

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Cited by 74 publications
(20 citation statements)
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“…As shown in the Supplemental Material [45], this allows us to iteratively construct a transverse [110] strain profile (for this direction the elastic component of the strain, to which diffraction is sensitive, is equal and opposite to the plastic strain) that is consistent with the diffraction image, under the assumption that the strain within the sample varies monotonically. Such algorithms have been used previously to deduce strain profiles from diffraction profiles [55,56].…”
mentioning
confidence: 99%
“…As shown in the Supplemental Material [45], this allows us to iteratively construct a transverse [110] strain profile (for this direction the elastic component of the strain, to which diffraction is sensitive, is equal and opposite to the plastic strain) that is consistent with the diffraction image, under the assumption that the strain within the sample varies monotonically. Such algorithms have been used previously to deduce strain profiles from diffraction profiles [55,56].…”
mentioning
confidence: 99%
“…Implicit in such a description is the assumption that excitation or energy deposition to the solid is slow compared to a vibrational period or to electron-phonon scattering times. Indeed, time-resolved x-ray diffraction measurements confirm that annealing of silicon via excitation with nanosecond laser pulses follows a thermal melting model [20,32].…”
Section: Iv2 Order-disorder Transitions In Solids and At Surfacesmentioning
confidence: 89%
“…Such analysis, especially of the wings of the substrate peak, was discussed for the case of Si crystals. [25] At longer time-scales the heat has diffused into the crystal on the order of the pump-spot size the problem becomes 3D, explaining the deviation.…”
Section: Simulation and Discussionmentioning
confidence: 99%