Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

Fancey, S.J.; Buller, Gerald S.; Massa, J. S.; Walker, A. C.; Perrin, S.D.; Dann, A.J.; Robertson, M.J.

doi:10.1016/s0022-0248(97)00500-9

Cited by 7 publications

(6 citation statements)

References 12 publications

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“…It is likely due to the variation of the lattice strain with changing the composition of Cd x Zn 1– x S alloy nanocrystals. Fancey et al showed that photoluminescence decay times are decreased with increasing lattice strain in InGaAsP/InP heterostructures. They have also mentioned that the nonradiative recombination rate is increased upon increasing the lattice strain, which is associated with defects at the heterostructure interfaces resulting from the lattice constant mismatch.…”

Section: Resultsmentioning

confidence: 99%

Lattice Strain Controls the Carrier Relaxation Dynamics in Cd_xZn_1–xS Alloy Quantum Dots

Sadhu

Patra

2012

J. Phys. Chem. C

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Here, we demonstrate the impact of lattice strain on the carrier relaxation of Cd x Zn 1−x S alloy nanocrystals. In alloy nanocrystals, the difference in the lattice constants of their constituents can induce a lattice strain that varies with the composition of alloy. We have analyzed the decay curves using a multiexponential decay function, and it is found that the average lifetime decreases with increasing the concentration of Zn in Cd x Zn 1−x S alloy nanocrystals. A stochastic model of carrier relaxation dynamics of Cd x Zn 1−x S alloy nanocrystals has been proposed to estimate the values of the radiative relaxation rate, nonradiative relaxation rate, and number of trap states. Results show that the radiative and nonradiative relaxation rates and the number of trap states increase with increasing the lattice strain of the alloy nanocrystals. Such alloy nanocrystals should have great potentials for nonlinear optical properties, photovoltaic devices, and solar cell.

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Section: Resultsmentioning

confidence: 99%

Lattice Strain Controls the Carrier Relaxation Dynamics in Cd_xZn_1–xS Alloy Quantum Dots

Sadhu

Patra

2012

J. Phys. Chem. C

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“…140−142 The difference in the bond lengths al. 143 that the shortening of decay time with increasing lattice strain occurred in InGaAsP/InP heterostructures, indicating that the lattice strain plays an important role in the relaxation process. Again, the lattice strain increases the nonradiative recombination rate that is associated with defects at the interfaces due to mismatch of lattice constants.…”

Section: ∑ ∑mentioning

confidence: 94%

“…It is reported by Fancey el. al . that the shortening of decay time with increasing lattice strain occurred in InGaAsP/InP heterostructures, indicating that the lattice strain plays an important role in the relaxation process.…”

Section: Qd-based Light-harvesting Systemsmentioning

confidence: 99%

Nanoscale Strategies for Light Harvesting

2016

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Recent advances and the current status of challenging light-harvesting nanomaterials, such as semiconducting quantum dots (QDs), metal nanoparticles, semiconductor-metal heterostructures, π-conjugated semiconductor nanoparticles, organic-inorganic heterostructures, and porphyrin-based nanostructures, have been highlighted in this review. The significance of size-, shape-, and composition-dependent exciton decay dynamics and photoinduced energy transfer of QDs is addressed. A fundamental knowledge of these photophysical processes is crucial for the development of efficient light-harvesting systems, like photocatalytic and photovoltaic ones. Again, we have pointed out the impact of the metal-nanoparticle-based surface energy transfer process for developing light-harvesting systems. On the other hand, metal-semiconductor hybrid nanostructures are found to be very promising for photonic applications due to their exciton-plasmon interactions. Potential light-harvesting systems based on dye-doped π-conjugated semiconductor polymer nanoparticles and self-assembled structures of π-conjugated polymer are highlighted. We also discuss the significance of porphyrin-based nanostructures for potential light-harvesting systems. Finally, the future perspective of this research field is given.

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“…Nie and co-workers have reported that the lattice strain in core–shell QDs modulates the exciton lifetimes of QDs as it controls the location of charge carriers . Fancey et al have reported that the shortening of decay time with increasing lattice strain occurs in InGaAsP/InP heterostructures . Analysis reveals that the lattice strain plays a crucial role in the nonradiative relaxation process for the alloy NCs.…”

Section: Resultsmentioning

confidence: 99%

“…39 Fancey et al have reported that the shortening of decay time with increasing lattice strain occurs in InGaAsP/InP heterostructures. 40 Analysis reveals that the lattice strain plays a crucial role in the nonradiative relaxation process for the alloy NCs. Here, the presence of biphases (W/ ZB) in CdS NCs creates the nonradiative relaxation process of excitons due to crystal defects whereas the lattice strain in alloy structure influences the nonradiative relaxation process.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Identification of Nonradiative Relaxation Processes in Alloy Nanocrystals

et al. 2020

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Luminescent colloidal nanocrystals (NCs) are extensively used in optoelectronics, light harvesting, and imaging, depending on their efficiency. The efficiency of these nanocrystals depends on radiative and nonradiative processes, which can be altered by crystal phase, nature of ligand, lattice strain, surface defects, etc. Herein, we investigate the role of crystal defects and the lattice strain on nonradiative relaxation processes of pure CdS and Cd x Zn 1−x S alloy NCs with changing compositions. Rietveld analysis reveals the presence of biphases in pure CdS NCs that influence the nonradiative relaxation process due to the trap states whereas the nonradiative relaxation process of alloy nanocrystals is controlled by the lattice strain developed in alloy NCs. The significant change in the hot electron cooling dynamics from 400 to <120 fs is obtained from pure to alloy QDs. It is seen that the nonradiative relaxation due to lattice strain follows in the order CdS < Cd 0.8 Zn 0.2 S < Cd 0.75 Zn 0.25 S < Cd 0.67 Zn 0.33 S whereas the nonradiative relaxation due to the crystal defect follows in the order CdS > Cd 0.8 Zn 0.2 S > Cd 0.75 Zn 0.25 S > Cd 0.67 Zn 0.33 S. Thus, both of the nonradiative processes are important to understand because they have significant influence on the ultrafast relaxation process, and this knowledge is beneficial for fabricating efficient optoelectronic devices.

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Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

Cited by 7 publications

References 12 publications

Lattice Strain Controls the Carrier Relaxation Dynamics in Cd_xZn_1–xS Alloy Quantum Dots

Lattice Strain Controls the Carrier Relaxation Dynamics in Cd_xZn_1–xS Alloy Quantum Dots

Nanoscale Strategies for Light Harvesting

Identification of Nonradiative Relaxation Processes in Alloy Nanocrystals

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Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures

Cited by 7 publications

References 12 publications

Lattice Strain Controls the Carrier Relaxation Dynamics in CdxZn1–xS Alloy Quantum Dots

Lattice Strain Controls the Carrier Relaxation Dynamics in CdxZn1–xS Alloy Quantum Dots

Nanoscale Strategies for Light Harvesting

Identification of Nonradiative Relaxation Processes in Alloy Nanocrystals

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Lattice Strain Controls the Carrier Relaxation Dynamics in Cd_xZn_1–xS Alloy Quantum Dots

Lattice Strain Controls the Carrier Relaxation Dynamics in Cd_xZn_1–xS Alloy Quantum Dots