Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dots

“…Therefore the decay time increases when the size of the QD increases. Similar dependence has been already observed at high temperature and is explained by carrier redistribution from bigger to smaller dots [17,20]. Because carrier thermal escape is negligible at 18K, we conclude that lateral coupling by tunnel effect occurs between the dots, which permits the carrier redistribution assisted by the wetting layer even at low temperatures [12].…”

Size-dependent radiative lifetime in vertically stacked (In,Ga)As quantum dot structures

“…4 The radiative lifetime ͑ r ͒ is a critical dot parameter in optimizing the device structure designs. 5 However, such studies performed on annealed QDs, 6 multimode-size QDs, 7 stacked layers of QDs, 8 QDs grown on off-oriented substrate, 9 and QD ensembles with different densities 10,11 present contradictory results and provide controversial explanation of their findings. 5 However, such studies performed on annealed QDs, 6 multimode-size QDs, 7 stacked layers of QDs, 8 QDs grown on off-oriented substrate, 9 and QD ensembles with different densities 10,11 present contradictory results and provide controversial explanation of their findings.…”

Strain Effects on Optical Properties of (In,Ga)As‐Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

“…The degree of linear polarization is found to be around 10% (Figure 3(b)). This result is the clear signature of elongated quantum dots [16][17][18]. Although the small dots require an elongated form, the large dots present a quasiisotropic behavior.…”