Time-resolved photoluminescence spectra of high-density InGaAs/AlGaAs quantum wire structures

Tsurumachi, Noriaki; Son, Chang-Sik; Kim, Tae Geun; Hikosaka, Kazunori; Komori, Kazuhiro; Ogura, Mutsuo

doi:10.1016/j.physe.2003.11.017

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…The cross-sectional SEM images of the In 0. [8,9]. Such expectation is verified by temperature-dependent PL measurements for both samples as shown in figure 2.…”

Section: Resultssupporting

confidence: 70%

Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

et al. 2005

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Gain-coupled distributed-feedback (GC-DFB) effects in a V-groove In 0.2 Ga 0.8 As/Al 0.2 Ga 0.8 As quantum-wire (QWR) array are investigated by comparison with those in a GaAs/Al 0.2 Ga 0.8 As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured for both samples, showing that the PL spectra from the QWRs are much stronger than those from the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAs QWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition (MOCVD) growth and characterized. As a result, strong nonlinearity in the emission spectra by optical feedback along the DFB directions is clearly observed near the threshold current, indicating that a V-groove InGaAs QWR array is a good candidate for a gain-coupled DFB laser.

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“…The cross-sectional SEM images of the In 0. [8,9]. Such expectation is verified by temperature-dependent PL measurements for both samples as shown in figure 2.…”

Section: Resultssupporting

confidence: 70%

Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

et al. 2005

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“…As the temperature increases the distribution of carriers among the quantum dots changes. The temperature dependence of the FWHM of the QDD and QDM shows an initial narrowing of the FWHM from 4 K to 94 K, although there is only a small shift below 50 K due to localization effects [18]. From Fig.…”

Section: Pl Temperature Dependence At Low Excitation Intensitymentioning

confidence: 77%

Time-Integrated Photoluminescence Studies of In0.3Ga0.7As/GaAs Quantum Dot Molecules

2006

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We investigate experimentally and theoretically optical and electronic properties of In 0.3 Ga 0.7 As/GaAs quantum dot molecules (QDMs) formed by two layers of self-assembled, vertically stacked quantum dots (QDs). Structures with In 0.3 Ga 0.7 As/GaAs QD layers separated by a thin GaAs barrier were grown by solid source molecular beam epitaxy, and were characterized by time-integrated photoluminescence (PL). For the temperature-dependent PL measurements a He-flow optical cryostat was used to control the temperature between 4 and 300 K. The experimentally observed behavior is in good agreement with that expected from our eight-band k·p calculations. Optical and electronic properties of these QDMs are further compared with those of dots grown under conditions that did not promote vertical organization.Mater. Res. Soc. Symp. Proc. Vol. 935

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“…For many material systems, as the time elapsed, the transient PL spectra shifted towards the lower energy side accompanied with a sharp drop in PL intensity due to the carriers trapping by localized states at low temperatures [ 26 , 27 ]. In our case, we did not observe any shift in PL peak by increasing the delay time.…”

Section: Resultsmentioning

confidence: 99%

Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

et al. 2020

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AlGaInAs quantum well (QW) lasers have great potential in the application fields of optical communications and eye-safety lidars, owing to the advantages of good gain performance. A large amount of experimental evidence indicated that carrier dynamic affects the resonant frequency and modulation response performance of QW lasers. However, the mechanism of carrier dynamic in AlGaInAs QW structure is still ambiguous for complicated artificial multilayers. In this paper, the carrier dynamic of AlGaInAs QW structure was investigated by temperature-dependent time-resolved photoluminescence (TRPL) in the range of 14 to 300 K. Two relaxation times (a fast component and a slow one) have a major impact on the PL emission spectra of the AlGaInAs QW below 200 K. The carriers prefer a fast decay channel in the low temperature regime, whereas the slow one a higher temperature. An unconventional temperature dependence of carrier relaxation is observed in both decay processes. The carriers’ lifetime decreases with the temperature increasing till 45 K and then increases with temperature up to 250 K. It is quite different from that in the bulk semiconductor. The mechanism of temperature-dependent carrier relaxation at temperatures above 45 K is a combination of dark state occupation and a nonradiative recombination process.

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Time-resolved photoluminescence spectra of high-density InGaAs/AlGaAs quantum wire structures

Cited by 6 publications

References 15 publications

Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

Time-Integrated Photoluminescence Studies of In0.3Ga0.7As/GaAs Quantum Dot Molecules

Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

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