Time-resolved photoluminescence of GaAs/GaAlAs M.Q.W. structures under picosecond excitation

Angeloni, L.; Chiari, Alessandro; Colocci, M.; Fermi, F.; Gurioli, Massimo; Querzoli, R.; Vinattieri, A.

doi:10.1016/0749-6036(89)90383-2

Cited by 7 publications

(2 citation statements)

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“…Hence, there is significant overlap between two consecutive peaks. Other reasons may be an effective background due to after-pulsing of the SPAD [51] or to slowly-decaying secondary-exciton states (lifetime ∼ 0.2-1.5 ns) [52,53]. These slowly-decaying exciton states may be the localised excitons seen in the small lower-energy tail in Fig.…”

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Single-photon emission from single-electron transport in a SAW-driven lateral light-emitting diode

et al. 2020

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Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a singlephoton source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ∼ 100 ps. This SAW-driven electroluminescence (EL) yields photon antibunching with g (2) (0) = 0.39 ± 0.05, which satisfies the common criterion for a single-photon source g (2) (0) < 0.5. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network.The development of single-photon sources is important for many quantum information technologies [1][2][3], such as quantum cryptography [4][5][6], quantum communication [7][8][9], quantum metrology [10, 11], and quantum computation [12, 13]. Currently, most high-performance single-photon sources are self-assembled InGaAs-based quantum dots (QDs) [14][15][16]. However, there are several issues that may limit their integration into practical quantum photonic networks [17][18][19][20][21][22][23][24]. Firstly, in conventional growth of self-assembled QDs, the location and size of each QD are quite random. Therefore, one has to rely on statistics to create structures like optical cavities and gates around a quantum dot. This will be an issue for applications that require several deterministicallyfabricated single-photon sources on a compact chip. Secondly, it is hard to precisely control the size of a quantum dot, which will affect the single-photon energy. Hence, it is challenging to make identical QD single-photon sources, which is essential for applications like quantum computation and a quantum repeater [12,25]. Finally, in order to ensure that a neutral exciton is created in every optical or electrical excitation, the e...

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