2017
DOI: 10.1016/j.optmat.2017.08.022
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Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages

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Cited by 14 publications
(9 citation statements)
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“…The origin of fast and slow PL decays in group III-nitride semiconductors has been the subject of a number of previous studies [15,19,[41][42][43][44][45]. After Refs.…”
Section: Resultsmentioning
confidence: 99%
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“…The origin of fast and slow PL decays in group III-nitride semiconductors has been the subject of a number of previous studies [15,19,[41][42][43][44][45]. After Refs.…”
Section: Resultsmentioning
confidence: 99%
“…Such FKOs features have been commonly observed in PR spectra of III-V semiconductors and structures and have been attributed to the modulation of the built-in electric fields present at the layer surface and/or layers' interfaces [30,31,49,50]. To obtain the electric field of the AlGaN films, the FKO period is analyzed within the asymptotic expression of PR [19,49]. This approach neglects the light-hole contribution to PR spectra and takes into account only the contribution of heavy holes [49].…”
Section: Resultsmentioning
confidence: 99%
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“…There is an opinion in the book [11], which is considered as one of basic sources on the problem of smoothing, that luminescent spectra must be smoothed by Savitzky-Golay method, using the window width that equals 11 or 25 points, and polynomials from quadratic to quintic inclusive. There are smoothed PL spectra in the paper [12], however it is indicated that smoothing was performed by the mathematical packages of qdot.com. The paper [13] shows the smoothed spectra of absorption; besides, it is mentioned, that the data were interpolated by means of splines, but there is no indication of which ones were used.…”
Section: Literature Reviewmentioning
confidence: 99%