Time-resolved cyclotron resonance in cuprous oxide

Naka, N.; Akimoto, Ikuko; Shirai, Masanobu; Kan'no, Ken‐ichi

doi:10.1103/physrevb.85.035209

Cited by 37 publications

(19 citation statements)

References 23 publications

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“…However, for excitons with large principal quantum numbers, which are composed of valence and conduction band states near the zone center, the approximation M X = m c + m v holds true, where m c and m v are the effective masses at k = 0. Considering the effective mass of the conduction band m 6 = 0.985 m 0 , and that of the Γ + 7 hole of m 7 = 0.575, both from timeresolved cyclotron resonance 32 , we obtain for the 2S yellow exciton a mass of 1.56 m 0 .…”

Section: B Discussionmentioning

confidence: 94%

Phonon-assisted absorption of excitons in Cu2O

2017

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The basic theoretical foundation for the modelling of phonon-assisted absorption spectra in direct bandgap semiconductors, introduced by Elliott 60 years ago 1 using second order perturbation theory, results in a square root shaped dependency close to the absorption edge. A careful analysis of the experiments 2 reveals that for the yellow S excitons in Cu2O the lineshape does not follow that square root dependence. The reexamination of the theory shows that the basic assumptions of constant matrix elements and constant energy denominators is invalid for semiconductors with dominant exciton effects like Cu2O, where the phonon-assisted absorption proceeds via intermediate exciton states. The overlap between these and the final exciton states strongly determines the dependence of the absorption on the photon energy. To describe the experimental observed line shape of the indirect absorption of the yellow S exciton states we find it necessary to assume a momentum dependent deformation potential for the optical phonons.

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Section: B Discussionmentioning

confidence: 94%

Phonon-assisted absorption of excitons in Cu2O

2017

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“…In our calculations we therefore use for the deformation potentials [36], which gives as exciton masses for the states with n 2  M m 1.56 . e X = For the 1 s state, the exciton mass is different due to the valence band structure and is given by M m 2.61 e X =…”

Section: Scattering Rates and Linewidthmentioning

confidence: 99%

Interaction of Rydberg excitons in cuprous oxide with phonons and photons: optical linewidth and polariton effect

2018

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We demonstrate that the optical linewidth of Rydberg excitons in Cu 2 O can be completely explained by scattering with acoustical and optical phonons, whereby the dominant contributions stems from the non-polar optical 3 Gand 5 Gmodes. The consequences for the observation of polariton effects are discussed. We find that an anti-crossing of photon and exciton dispersions exists only for states with main quantum numbers n>28, so polariton effects do not play any role in the experiments reported up to now.

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“…A lifetime of the carrier in a rotating motion is extracted from the decay time of a temporal curve. Temporal variation of carrier density is also estimated based on the plasma shift analysis [16,30,31]. Here, to study the basic properties of carriers, we paid careful attention to minimize plasma shifts of the resonance peaks, with the incident pulse energy less than 5.8 μJ which ensures the carrier density at the delay times later than 600 ns is less than 10 11 cm −3 .…”

Section: Experimental Methodsmentioning

confidence: 99%

Intrinsic Carrier Parameters and Optical Carrier Injection Method in High-Purity Diamonds

Akimoto¹,

Naka²

2020

Some Aspects of Diamonds in Scientific Research and High Technology

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Diamond attracts increasing attentions as a semiconductor, since high-purity synthesized diamonds have become commercially available in these decades. For appropriate design of any devices, the basic carrier transport parameters should be known. However, it has been difficult to determine carrier parameters in diamond, because the controlled doping and Ohmic contact formation have been hard to achieve. In this chapter, a modern experimental method to measure basic carrier parameters, such as the effective mass, scattering times, and mobility of intrinsic diamonds, is introduced. The method, i.e., nanosecond time-resolved cyclotron resonance (TRCR), is applicable to optically injected carriers in intrinsic diamonds without wire connection. Following the key technique of optical carrier injection, detailed analysis methods for the cyclotron resonance spectra are introduced. The extracted basic parameters of diamond are summarized in comparison to those of silicon and germanium in the same group-IV semiconductor family. This is worthy for triggering further ideas in application-oriented researches using widespread materials.

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Time-resolved cyclotron resonance in cuprous oxide

Cited by 37 publications

References 23 publications

Phonon-assisted absorption of excitons in Cu2O

Phonon-assisted absorption of excitons in Cu2O

Interaction of Rydberg excitons in cuprous oxide with phonons and photons: optical linewidth and polariton effect

Intrinsic Carrier Parameters and Optical Carrier Injection Method in High-Purity Diamonds

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