Time-Domain Large-Signal Modeling of Traveling-Wave Modulators on SOI

We establish experimentally the suitability of an all-silicon optical modulator to support future ultra-high-capacity coherent optical transmission links beyond 400 Gb/s. We present single-carrier data transmission from 400 Gb/s to 600 Gb/s using an all-silicon IQ modulator produced with a generic foundry process. The operating point of the silicon photonic transmitter is carefully optimized to find the best efficiency bandwidth trade-off. We present a methodology to split pre-compensation between digital and optical stages. For the 400 Gb/s transmission, we achieved 60 Gbaud dual-polarization (DP)-16QAM, reaching a distance of 1,520 km. Transmission of 500 Gb/s was further tested using 75 Gbaud 16QAM and 60 Gbaud 32QAM, reaching 1,120 km and 480 km, respectively. We finally demonstrated 72 Gbaud DP-32QAM (720 Gb/s) transmitted over 160 km and 84 Gbaud DP-16QAM (672 Gb/s) transmitted over 720 km, meeting the threshold for 20% forward error correction overhead and achieving net rates of 600 Gb/s and 576 Gb/s, respectively. To the best of our knowledge, these are the highest baud-rate coherent transmission results achieved using an all-silicon IQ modulator. We have demonstrated that we can reap the myriad advantages of SiP integration for transmission at extreme bit rates.

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“…We chose a length of 4.5 mm for this trade-off. More details of the modulator design can be found in [17].…”

Section: Silicon Photonics Iq Modulator Design and Characterizationmentioning

confidence: 99%

Single-carrier 72 GBaud 32QAM and 84 GBaud 16QAM transmission using a SiP IQ modulator with joint digital-optical pre-compensation

et al. 2019

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“…Assuming quasi-TEM propagation, we use the telegrapher's RLGC model [12][13][14] to investigate the slow-wave propagation of microwaves along the CPS transmission line on SOI. The RLGC model of the p-n junction loaded CPS transmission line is shown in Fig.…”

Section: Appendix Rf Loss In the Transmission Linementioning

confidence: 99%

Silicon Photonic IQ Modulators for 400 Gb/s and Beyond

Sepehrian

Lin

Rusch

et al. 2019

J. Lightwave Technol.

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Silicon photonics has enormous potential for ultrahigh-capacity coherent optical transceivers. We demonstrate an IQ modulator using silicon photonic traveling-wave modulators optimized for higher-order quadrature amplitude modulation (QAM). Its optical and RF characteristics are studied thoroughly in simulation and experiment. We propose a system-orientated approach to optimization of the silicon photonic IQ modulator, which minimizes modulator-induced power penalty in a QAM transmission link. We examine the trade-off between modulation efficiency and bandwidth for the optimal combination of modulator length and bias voltage to maximize the clear distance between adjacent constellation points. This optimum depends on baud rate and modulation format, as well as achievable driving voltage swing. Measured results confirm our prediction using the proposed methodology. Without pre-compensating bandwidth limitation of the modulator, net data rates up to 232 Gb/s (70 Gbaud 16-QAM) on single polarization are captured, indicating great potential for 400+ Gb/s dual-polarization transmission.

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“…The distance between heavy doping and waveguide boundary is set to 900 nm to trade-off radio frequency (RF) and optical loss. We designed a traveling-wave electrode using the model in [17]. The RF transmission line is terminated in 50 Ω, implemented on-chip using a doped resistor.…”

Section: Design and Fabrication Of Sip Dd-mzmmentioning

confidence: 99%

Frequency Comb Generation Using a CMOS Compatible SiP DD-MZM for Flexible Networks

Lin

Sepehrian

et al. 2018

IEEE Photon. Technol. Lett.

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On-chip frequency comb generation is a promising solution for seeding a chip-scale optical transmitter for both Nyquist wavelength-division multiplexing (WDM) and orthogonal frequency-division multiplexing. We demonstrate flexible frequency comb generation using a silicon photonic dual-drive Mach-Zehnder modulator fabricated on a CMOS-compatible process. Our on-chip comb has five lines spaced at 20 GHz, with a high tone-to-noise ratio of about 40 dB after one stage optical amplification. Our back-to-back transmission achieves bit error rates (BERs) well below 2e-2, the threshold for 20% overhead forward error correction (FEC), for 800 Gb/s using 16 Gbaud 32QAM on five WDM channels. We also test a seamless 800 Gb/s super-channel using 5×20 Gbaud 16QAM, with BER below the 7% overhead FEC threshold of 3.8e-3. To the best of our knowledge, this is the first demonstration of high-spectralefficiency data carried by an all-silicon optical frequency comb. This establishes that a silicon optical frequency comb has sufficient optical signal to noise ratio for high order QAM, as well as excellent stability for super-channels without guard bands, paving the way to an integrated high-spectral-efficiency multi-carrier optical transmitter.

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Time-Domain Large-Signal Modeling of Traveling-Wave Modulators on SOI

Cited by 40 publications

References 19 publications

Single-carrier 72 GBaud 32QAM and 84 GBaud 16QAM transmission using a SiP IQ modulator with joint digital-optical pre-compensation

Single-carrier 72 GBaud 32QAM and 84 GBaud 16QAM transmission using a SiP IQ modulator with joint digital-optical pre-compensation

Silicon Photonic IQ Modulators for 400 Gb/s and Beyond

Frequency Comb Generation Using a CMOS Compatible SiP DD-MZM for Flexible Networks

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