Time domain analyses of the converse magnetoelectric effect in a multiferroic metallic glass-relaxor ferroelectric heterostructure

Abstract

The dynamic time domain response of the converse magnetoelectric effect in a multiferroic Metglas ® / Pb͑Mg 1/3 Nb 2/3 ͒O 3-PbTiO 3 ͑PMN-PT͒ heterostructure, under the application of a square waveform electric field excitation of 8 kV/cm at a frequency of 0.4 Hz, is reported. The relaxation behavior followed a stretched power-law function allowing the calculation of an intrinsic time constant. Aging behavior of magnetoelectric coupling was observed after polarization switching of 1000 cycles. These phenomena are predominantly attributed to the temporal response of polarization within the PMN-PT crystal. Results elucidate the dynamic properties of relaxor-based multiferroic heterostructures and importantly define operational constraints for low frequency device operation.

Piezoelectric properties of epitaxial Pb(Zr0.525, Ti0.475)O3 films on amorphous magnetic metal substrates

“…The peaks at 31. 2 and 38.3 correspond to (110) and (111) planes of the PZT film, respectively. It is clear that the (111) plane is dominant.…”

“…The magnetoelectic (ME) effect enables electric polarization from the application of magnetic fields, and vice versa. [1][2][3] One such ferroelectric, Pb(Zr 0.525 , Ti 0.475 )O 3 , or PZT, 4 plays an important role in many magnetoelectric heterostructures. A large ME coupling in the heterostructure is determined by the selection of magnetostrictive and piezoelectric materials.…”

Nonvolatile, reversible electric-field controlled switching of remanent magnetization in multifunctional ferromagnetic/ferroelectric hybrids

“…[10][11][12][13][14][15][16] A further major development is the demonstration of a reversible, all-electricfield control of magnetization orientation or reversal, and thus of an electrically controlled magnetization switching. [17][18][19][20][21][22][23][24][25][26] However, the literature so far is focused on a nonhysteretic all-electrical magnetization manipulation, i.e., the electricfield induced magnetization changes are volatile in the sense that they return to their initial state upon removing the electric field. Obviously, the next step now is to achieve a nonvolatile or remanent electric-field control of M. First experiments in this direction have already been performed in Ni thin film/ferroelectric hybrid samples.…”

Microwave magnetoelectric coupling and ferromagnetic resonance frequency tuning of a Co2MnSb/GaAs/PZN-PT heterostructure

“…The perpendicular and in-plane cubic and perpendicular uniaxial anisotropy terms are usually considered to be due to the strain in the crystal lattice caused by the lattice constant mismatch between the Co 2 MnSb film and the substrate on which it was grown. 25 The in-plane uniaxial term is due to the fact that there is a difference between the [110] and [1][2][3][4][5][6][7][8][9][10] crystallographic directions despite the high symmetry zinc-blende structure of the material. 26 Heinrich et al, 27 , 28 have recently found an alternative mechanism of in-plane or perpendicular magnetic anisotropy in Heusler alloys related to ordered lattice defects which are more pronounced in thick films, such as epitaxially grown NiMnSb(001) films grown on an InGaAs/InP(001) template.…”

“…where K 1 is the fourth-order crystalline cubic anisotropy with α i being the direction cosines of M in the cubic axes, K ┴ is a second-order anisotropy term normal to the film, and the second-order K u anisotropy term is included to represent the inequivalence between [110] and [1][2][3][4][5][6][7][8][9][10]. Here, it is assumed that the K u axis aligns along [110].…”