Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress

Shankar, Bhawani; Shikha, Swati; Singh, Anant; Kumar, Jeevesh; Soni, Ankit; Gupta, Sayak Dutta; Raghavan, Srinivasan; Shrivastava, Mayank

doi:10.1109/tdmr.2020.3007128

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Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress

Cited by 5 publications

References 19 publications

Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization

Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization

Trap-Assisted and Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs

Interplay of Various Charge Sources in AlGaN/GaN Epi-Stack Governing HEMT Breakdown

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