Time-dependent hole and electron trapping effects in SIMOX buried oxides

Boesch, H. E.; Taylor, Thomas L.; Hite, L.R.; Bailey, Warren

doi:10.1109/23.101218

Cited by 83 publications

(9 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the past, a similar evaluation was performed on the TSL of thin silica films obtained by oxygen implantation on silicon in the 190-290 K interval [10]. It is very interesting to remark that, in spite of the different origin and doping of our present silica samples, the present data are in good agreement with those previously obtained in [10] as well as with available literature data on trap energies based on electrical methods [12][13][14]. The present study, dealing with TSL in a very wide temperature range and taking advantage of intense TSL signals provided by the presence of luminescent activators, represents an extension of the previously mentioned investigations and confirms the common and intrinsic nature of traps in different silica forms.…”

Section: Discussionsupporting

confidence: 93%

Thermally stimulated luminescence of Ce and Tb doped SiO2 sol–gel glasses

Vedda

Chiodini

Martino

et al. 2005

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Section: Discussionsupporting

confidence: 93%

Thermally stimulated luminescence of Ce and Tb doped SiO2 sol–gel glasses

Vedda

Chiodini

Martino

et al. 2005

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

“…[39][40][41][42] Even in the low-dose (D ϭ4ϫ10 17 O ϩ cm Ϫ2 ) SIMOX BOX where silicon inclusions are absent, the hole trapping probability remains at nearly 100% indicating that hole traps are related to oxide network imperfections. 14 The high-temperature annealing of thermally grown SiO 2 sandwiched between two silicon layers, such as in the BOX of bonded structures, 43,44 causes the hole trapping properties to be similar to those of the SIMOX BOX.…”

Section: Defects In the Buried Sio 2 Of Simox Structures: An Overmentioning

confidence: 95%

Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon

Afanasʼev

Stesmans

Revesz³

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

The microstructure and electrical properties of buried SiO2 layers produced in silicon by the implantation of oxygen ions are analyzed in terms of implantation parameters and supplemental incorporation of oxygen. The buried oxides show inhomogeneous etching in aqueous HF, revealing the presence of a crystalline oxide phase and Si-enriched regions. Silicon enrichment in SiO2 is found in the form of Si inclusions and oxygen deficient network defects. The former are found to be sensitive to the oxygen implantation profile, and may arise as a result of a blockage of Si outdiffusion by crystalline oxide inclusions. The network defects, in turn, are predominantly generated during high temperature postimplantation annealing, caused possibly by some mechanism of silicon transport from the interfaces into the bulk of oxide. The electron trapping and electrical conduction characteristics of buried oxides are found to correlate with the density and size of the inhomogeneities. By contrast, hole trapping and the generation of positive charge at the Si/oxide interfaces by exposure to hydrogen at elevated temperature are controlled by the network defects in the bulk of the oxide and in the near interfacial layers, respectively.

show abstract

“…As is the case with gate and field oxides [11], the radiation response of buried oxides has been found to be highly dependent on the fabrication process [12,13]. Two common methods for fabricating SOI substrates are separation by implanted oxygen (SIMOX) and wafer bonding.…”

Section: Buried Oxidesmentioning

confidence: 99%