Time dependence of water‐reducing photocurrent with change of the characteristics of n‐type GaN photo‐illuminated working electrodes

Fujii, K.; Koike, Kayo; Atsumi, Mika; Goto, T.; Itoh, Takashi; Yao, Takafumi

doi:10.1002/pssc.201000937

Cited by 8 publications

(4 citation statements)

References 5 publications

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“…The order of the saturated photocurrent would reflect the number of the recombination center. The higher density of the recombination center was expected for the higher carrier concentration sample [9]. Thus, the lower saturated photocurrent was observed for the higher carrier concentration sample for the 1st cycle.…”

Section: Cyclic Voltammetrymentioning

confidence: 87%

Surface stability of n‐type GaN depending on carrier concentration and electrolytes under photoelectrochemical reactions

Koike

Nakamura

Sugiyama

et al. 2014

Phys. Status Solidi C

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Photoelectrochemical properties and stabilities of n‐type GaN dependent on the carrier concentration and electrolytes were investigated. Flatband potential obtained from Mott‐Schottky plot shifted to positive direction with lowering the carrier concentration. The GaN surface morphologies after the reaction with H2SO4 were changed to rough. In contrast, the surface morphologies were not much changed and were mirror like for the case of NaOH electrolytes. These results show the GaN surface absorbed materials during the photoelectrochemical reactions were changed by the electrolyte and carrier concentration. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Cyclic Voltammetrymentioning

confidence: 87%

Surface stability of n‐type GaN depending on carrier concentration and electrolytes under photoelectrochemical reactions

Koike

Nakamura

Sugiyama

et al. 2014

Phys. Status Solidi C

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“…These time intervals have been generally used in the literature. 17,18 Figure 4 exhibits the photocurrent profile of the photoelectrodes with and without the NiO nano-particles as a function of testing time. In order to demonstrate the significantly enhanced performance as a result of the addition of the NiO nano-particles, a performance index has been used, defined as the ratio of the photocurrent of the photoelectrode with the NiO nano-particles to that without the NiO nanoparticles at each time point (base index 100).…”

mentioning

confidence: 99%

Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation

Benton

Bai

Wang

2013

Applied Physics Letters

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A significant reduction in photo-electrochemical etching effects has been achieved on an InGaN/GaN nanorod array structure used as a photoelectrode in NaOH electrolyte by means of depositing transparent nickel oxide nano-particles on the nanorod array structure. Alongside this, the addition of the nickel oxide nano-particles has also led to an increase in photocurrent, thus, enhancing energy conversion efficiency. The enhanced performance is attributed to the discontinuities in both conduction band and valence band formed between the nickel oxide and the GaN, which promote the photo-generated electrons to move to a counter electrode and also lead to an enhanced diffusion of the photo-generated holes from the GaN into the NiO. This effect reduces the recombination of the electrons and the holes due to an increased separation between them and also significantly decreases the photo-electrochemical etching as a result of a sizeable reduction in the number of the photo-generated holes accumulated at the GaN/electrolyte interface.

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“…33 The fabrication of nanorods and the incorporation of indium into the device will increase the likelihood of device degradation. Recently we reported the use of NiO nanoparticles to prevent this corrosion occurring in multi quantum well devices.…”

Section: Nio Nanoparticlesmentioning

confidence: 99%

Nanoporous GaN for enhanced solar hydrogen production

2014

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In this report we present the fabrication of III-nitride devices with nanoporous structure used as photoelectrodes for solar water splitting. Photoelectrochemical etching in a KOH solution of the GaN and InGaN/GaN devices at different concentrations and applied voltages has been employed to fabricate both planar and nanorod devices into nanoporous structures with controllable pore sizes. Photoluminescence measurements of the GaN and InGaN/GaN multi-quantum well (MQW) with nanoporous structures have shown an increase in intensity over the un-etched samples as a result of the release of the compressive strain which nitride samples grown on sapphire suffer. An enhancement in both photocurrent and hydrogen generation has been achieved across all samples with the nanoporous structure compared to their standard counterparts. Improved carrier extraction as a result of the enhanced surface area allows for better chargetransfer between the electrode and electrolyte. The significantly enhanced incident photon conversion efficiency (IPCE) of all nanoporous devices has been obtained.

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Time dependence of water‐reducing photocurrent with change of the characteristics of n‐type GaN photo‐illuminated working electrodes

Cited by 8 publications

References 5 publications

Surface stability of n‐type GaN depending on carrier concentration and electrolytes under photoelectrochemical reactions

Surface stability of n‐type GaN depending on carrier concentration and electrolytes under photoelectrochemical reactions

Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation

Nanoporous GaN for enhanced solar hydrogen production

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