Time-dependence of the chemical response of silicon nitride surfaces

Bousse, Luc; Hafeman, Dean G.; Tran, Nancy

doi:10.1016/0925-4005(90)80231-n

Cited by 76 publications

(55 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to refs. [78,79], the slow response and associated hysteresis can be related to buried sites that react slowly due to time needed for diffusion of potential-determining ions in the insulator's sub-surface layer near the electrolyte-insulator interface.…”

Section: Silicon Nitride Filmsmentioning

confidence: 98%

See 1 more Smart Citation

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Vlasov

Tarantov

Bobrov

2003

Analytical and Bioanalytical Chemistry

View full text Add to dashboard Cite

Recent trends in research and development of electrolyte-insulator-semiconductor (EIS) field-effect chemical sensors (ion-selective field-effect transistors, light-addressable potentiometric sensors, capacitive EIS-sensors) with inorganic gate insulators (oxide, nitride and chalcogenide films) are reviewed. Physical properties of EIS systems and basic mechanisms of their chemical sensitivity are examined. Analytical characteristics and sensing mechanisms of EIS pH sensors with oxide and nitride films, as well as metal ions sensors with chalcogenide films, are critically discussed. Prospects of future research on EIS field-effect biosensors are briefly outlined.

show abstract

Section: Silicon Nitride Filmsmentioning

confidence: 98%

“…Analytical applications of EIS sensors with silicon nitride films are hindered by a slow pH response [78,79,80]. According to refs.…”

Section: Silicon Nitride Filmsmentioning

confidence: 99%

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Vlasov

Tarantov

Bobrov

2003

Analytical and Bioanalytical Chemistry

View full text Add to dashboard Cite

show abstract

“…Also, the passivation layer should be reactive to the change of fluid pH in order to induce generation of accumulation/depletion layer of mobile charge carriers. The roles of passivation layers for electrical insulation, ion-diffusion barrier, and sensing membranes to target chemical species are significant and thus have been numerously discussed in ISFET (Ion Sensitive Field Effect Transistor)-based pH sensors [18][19][20][21][22][23][24][25][26]. However, previous works on SiNW pH sensors have provided only brief accounts for forming thin oxidepassivation layer by oxygen plasma [7] or short-term thermal oxidation [3][4][5]9] without systematic studies of the effect of the materials and thickness on passivation layers.…”

Section: Operating Principle Of Silicon Nanowire-based Ph Sensorsmentioning

confidence: 99%

Quantitative studies of long-term stable, top-down fabricated silicon nanowire pH sensors

et al. 2012

View full text Add to dashboard Cite

We report a simple and effective method to develop long-term stable, top-down fabricated silicon nanowire (SiNW) pH sensors along with systematic studies on the performance of the sensors. In this work, we fabricated the SiNW pH sensors based on top-down fabrication processes. In order to improve the stability of the sensor performance, the sensors were coated with a passivation layer (PECVD-based silicon nitride) for effective electrical insulation and ion-blocking. The stability, pH sensitivity, and repeatability of the sensor response are critically analyzed with regard to the physics of sensing interface between sample liquid and the sensor surface. Also, trade-off between the stability and pH sensitivity of the sensor response is discussed.

show abstract

“…It shows no hydration and no ion diffusion, but there is a slow surface oxidation which leads to a sensitivity degradation with time. The background drift is low, about 0.1 mV/h for nitride deposited by low-pressure chemical vapor deposition (LPCVD) [19], but residual slow-response effects can produce a hysteresis of several mV after a pH excursion.…”

Section: Introductionmentioning

confidence: 99%

FET‐Based Chemical Sensor Systems Fabricated with Standard Technologies

Errachid¹,

Zine

Samitier³

et al. 2004

Electroanalysis

View full text Add to dashboard Cite

Miniaturized solid-state ion sensors based on field-effect transistors on silicon can take advantage of the capabilities of microelectronics and microsystems technology for the integration of combined functionalities. Optimized solidstate chemical sensors usually require specific materials and fabrication processes. However, if standard fabrication processes can be used, integrated chemical sensor systems can be developed in a shorter time and in a cost effective way. We show that, for applications in which a long operating time is not required, such as in disposable biomedical sensors, good integrated sensor systems can be fabricated with standard materials and processes. Specific examples are presented, such as multisensor systems, sensors with integrated signal-processing circuits and sensors with particle manipulation electrodes.

show abstract

Time-dependence of the chemical response of silicon nitride surfaces

Cited by 76 publications

References 10 publications

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Quantitative studies of long-term stable, top-down fabricated silicon nanowire pH sensors

FET‐Based Chemical Sensor Systems Fabricated with Standard Technologies

Contact Info

Product

Resources

About