Time constant of defect relaxation in ion-irradiated 3<i>C</i>-SiC

Wallace, J. B.; Aji, L. B. Bayu; Shao, Lin; Kucheyev, S. O.

doi:10.1063/1.4921471

Cited by 24 publications

(19 citation statements)

References 24 publications

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“…Furthermore, in Ref. [19], a comprehensive analysis of RBS/Cderived depth profiles of disorder revealed anomalous features and pointed out to the crucial importance of radiation defect dynamics, as also confirmed in two other studies [20,21].…”

Section: Introductionsupporting

confidence: 70%

The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

et al. 2017

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Mechanisms of radiation damage buildup in 3C-SiC remain poorly understood. Here, we use X-ray diffraction in combination with numerical simulations to study depth profiles of radiation-produced strain and lattice damage in 3C-SiC bombarded in the temperature range of 25-200 °C with 500 keV Ar ions. Results reveal increased defect recombination with increasing temperature, with a critical amorphization fluence increasing from 0.17 to 0.44 displacements per atom. The amorphization process is found to be correlated with the evolution of lattice strain. We find that, at fluences corresponding to the onset of amorphization, lattice strain is ~2% and is independent of temperature. With continuing bombardment above the onset of amorphization, the strain in the crystal bulk increases and reaches a saturation value that decreases from 7% to 5% with increasing temperature. Based on strain profiles, we compute depth profiles of the effective concentration of point defect clusters in the crystalline phase. Bombardment at higher temperatures results in lower maximum defect concentrations pointing to enhanced defect mobility.

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Section: Introductionsupporting

confidence: 70%

The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

et al. 2017

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“…Despite such similarity of the range of the τ values measured, the details of defect interaction dynamics are strongly material dependent. First, we note that these previous pulsed-beam studies of different materials 16 , 18 , 19 were performed at different T s. Only at 100 °C, do data sets for these four materials overlap, yielding τ 1 values of 8.9 ± 1.5, 0.98 ± 0.07, 4.6 ± 0.8, and 6.9 ± 1.2 ms for Ge, Si, 3 C -SiC, and 4 H -SiC, respectively, irradiated with 500 keV Ar ions 16 , 18 , 19 . Hence, among these four materials, Ge exhibits the slowest defect interaction dynamics at 100 °C (an order of magnitude slower than for Si).…”

Section: Resultsmentioning

confidence: 87%

Dynamic annealing in Ge studied by pulsed ion beams

Wallace

Aji

Shao

et al. 2017

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The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. Here, we study the dynamics of radiation defects in Ge in the temperature range of 100–160 °C under pulsed beam irradiation with 500 keV Ar ions when the total ion fluence is split into a train of equal square pulses. By varying the passive portion of the beam duty cycle, we measure a characteristic time constant of dynamic annealing, which rapidly decreases from ~8 to 0.3 ms with increasing temperature. By varying the active portion of the beam duty cycle, we measure an effective diffusion length of ~38 nm at 110 °C. Results reveal a major change in the dominant dynamic annealing process at a critical transition temperature of ~130 °C. The two dominant dynamic annealing processes have an order of magnitude different activation energies of 0.13 and 1.3 eV.

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“…Here, we use a novel pulsed ion beam technique78910 to measure the T dependence of the DA time constant ( τ ) in Si bombarded with 500 keV Ar ions in a regime of relatively high ion doses when damage accumulation is dominated by inter-cascade DA processes (i.e., by the interaction of mobile defects generated in different collision cascades). Our results reveal two well-defined regions in the Arrhenius plot of the DA rate, with very different E a s of 73 and 420 meV, below and above ~60 °C, respectively.…”

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confidence: 99%

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

Wallace

Aji

Martin

et al. 2017

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The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from −20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

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Time constant of defect relaxation in ion-irradiated 3C-SiC

Cited by 24 publications

References 24 publications

The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

Dynamic annealing in Ge studied by pulsed ion beams

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

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