2008 IEEE International Conference on Semiconductor Electronics 2008
DOI: 10.1109/smelec.2008.4770344
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Time and cost reduction for 45° notch oriented 〈100〉 silicon substrate sample prepation

Abstract: Common method for sample preparation on 45° notch oriented <100> silicon substrate requires cleaving followed by polishing technique. To prevent surface damage during polishing, top layer capping using epoxy cover-glass is required. A faster technique named as 'Superman' method involves only cleaving has been proposed.

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