Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor: InxGa1−xAs/GaAs

Yakunin, M. V.; Galistu, G.; Visser, A. de

doi:10.1016/j.physe.2007.09.048

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…The overall nature of this behavior is the suppression by B || of the connection between layers of DQW. This effect cannot be represented within quasiclassical description [4,5]. Similar behavior was also observed in GaAs/AlGaAs DQW [6], but without calculations.…”

Section: Introductionsupporting

confidence: 53%

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Yakunin¹,

Visser²,

Galistu³

et al. 2009

J. Phys.: Conf. Ser.

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Development of quantum Hall peculiarities due to mobility gap between spin-split magnetic levels with addition of the parallel magnetic field component B || is analyzed in double quantum wells (DQW) created in InGaAs/GaAs and InAs/AlSb heterosystems chosen due to their relatively large bulk g-factors. In InGaAs/GaAs DQWs, the nonmonotonous behavior of these peculiarities is observed and explained within single-electron approach in terms of competition between enhanced spin splitting and localization of electrons in the layers of DQW with increased B ||. In InAs/AlSb DQW, the tunneling connection between the layers is very weak due to high barrier, nevertheless the collective odd-numbered peculiarities are revealed that exist due to spontaneous interlayer phase coherence. B || destroys these states that is manifested, in particular, in the suppression of the peculiarity for filling factor ν = 3.

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Section: Introductionsupporting

confidence: 53%

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Yakunin¹,

Visser²,

Galistu³

et al. 2009

J. Phys.: Conf. Ser.

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“…E F passes through this gap in the vicinity of three points where the levels cross. Existence of groups of closely spaced levels was observed to cause a similar distortion of the QH plateau in the shape of a dip (e.g., in a traditional DQW 23,24 ). A possible cause for appearance of such a dip on the QH plateau may be connected with an interplay between current carrying strips at the sample edges, 25 and close positions of the neighboring levels may promote the effect.…”

Section: Peculiarities In the Qh Range Of Fieldsmentioning

confidence: 94%

Magnetotransport in double quantum well with inverted energy spectrum: HgTe/CdHgTe

Yakunin¹,

Суслов²,

Popov³

et al. 2016

Phys. Rev. B

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We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands than in known HgTe single quantum wells (QW), which may be regulated here by an applied gate voltage Vg. This large overlap manifests itself in a much higher critical field Bc separating the range above it with a plain behavior of the Hall magnetoresistance ρxy(B), where the quantum peculiarities shift linearly with Vg, and the range below with a complicated behavior. In the latter case specific structures in ρxy(B) are formed like a double-N -shaped ρxy(B), reentrant sign-alternating quantum Hall effect with transitions into a zero-filling-factor state etc., which are clearly manifested here due to better magnetic quantization at high fields, as compared to the features seen earlier in a single HgTe QW. The coexisting electrons and holes were found in the whole investigated range of positive and negative Vg as revealed (i) from fits to the low-field N -shaped ρxy(B), (ii) from the Fourier analysis of oscillations in ρxx(B) and (iii) from a specific behavior of ρxy(B) at high positive Vg. A peculiar feature here is that the found electron density n remains almost constant in the whole range of investigated Vg while the hole density p drops down from the value a factor of 6 larger than n at extreme negative Vg to almost zero at extreme positive Vg passing through the charge neutrality point. We show that this difference between n and p stems from an order of magnitude larger density of states for holes in the lateral valence subband maxima than for electrons in the conduction subband minimum. We analyze our observations on the basis of a calculated picture of magnetic levels in a DQW and suggest that their specificity is due to (i) a nonmonotonic course of the valence subband magnetic levels and an oscillating behavior of the valence subband top versus field due to lateral maxima in the energy spectrum, (ii) a reduced gap between the lowest electron and the highest hole magnetic levels where the electron-and hole-type localized states are superposed, and (iii) a possible formation of the interlayer electron-hole excitons.

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HgTe/CdHgTe double quantum well with a spectrum of bilayer graphene and peculiarities of its magnetotransport

et al. 2016

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Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor: InxGa1−xAs/GaAs

Cited by 3 publications

References 6 publications

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Magnetotransport in double quantum well with inverted energy spectrum: HgTe/CdHgTe

HgTe/CdHgTe double quantum well with a spectrum of bilayer graphene and peculiarities of its magnetotransport

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