TiCN thin films grown by reactive crossed beam pulsed laser deposition

Structural transformations in TiAlSiCN coatings in the temperature range 900–1600 °C

“…7a between 600 and 700 cm À1 probably indicates that C atoms occupy N sites and, accordingly, contribute to the optical, rather than the acoustic, modes [39][40][41]. This agrees well with previous conclusions by other authors that the vibration frequencies of TO and LO modes near the center of the Brillouin zone of nitride-based coatings strongly overlap, while those of carbide-base coatings are noticeably separated, owing to a partly unscreened displacement-induced electric field [46,47].…”

“…the strong first-order scattering and low intensities of second-order acoustic peaks, indicate the presence of point defects and/or lattice disorder [38]. The first-order scattering peaks are shifted to higher frequencies typical for TiC [39][40][41]. Given that the carbon content in the as-deposited coating was not high ($13 at.%), the observed shift of the peaks cannot be explained only by the presence of carbon.…”

Hard wear-resistant TiAlSiCN/MoSeC coatings with low coefficient of friction at room and elevated temperatures

“…Для идентификации пиков от селенида молибдена осуществлена предварительная съемка порошка [13,14]. В спек-тре покрытия 2 дополнительно появляется пик при ν = 100÷200 см -1 , который, по-видимому, связан с присутствием фазы MoSe 2 .…”

Preparation of vanadium oxide thin films modified with Ag using a hybrid deposition configuration

“…The preparation of multicomponent thin films by a crossed-beam pulsed laser deposition configuration in which the ablation of two different targets, in vacuum or in presence of a reactive atmosphere (N 2 ), is performed in order to prepare nanocrystalline thin films of ternary compounds. This configuration has been successfully used to prepare TiCN [5], TiAlN [6], and Co:TiO 2 [7] thin films. The use of an alternative configuration in which the film is formed by the interaction of a laser ablation plasma with a flux of atomic vapor has been used to deposit Bi:TiO 2 thin films controlling the amount of Bi into the produced film [8].…”