Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC

Pécz, B.; Toth, L. E.; Forte-Poisson, M.A. di; Vacas, J.

doi:10.1016/s0169-4332(02)01195-9

Cited by 62 publications

(31 citation statements)

References 15 publications

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Section: Applicationsmentioning

confidence: 99%

“…MAX phases synthesized by solid state reactions or sputter deposition can potentially be used as electrodes in SiC-, AlN-, or GaN-based semiconductor devices or sensor applications [195,198,326]. "Ti-based" contacts to SiC are in use and typically contain Ti 3 SiC 2 formed by solid state reactions [191,192,326]. A more exotic suggestion is the claim (based on theoretical calculations of the dielectric function and infrared emittance [327,328]) that Ti 4 AlN 3 and V 4 AlC 3 have the potential to be used as a coating on spacecrafts to avoid solar heating and also increase the radiative cooling in future space missions to Mercury.…”

Section: Applicationsmentioning

confidence: 99%

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The M+1AX phases: Materials science and thin-film processing

et al. 2010

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This article is a critical review of the M n+1 AX n phases ("MAX phases", where n =1, 2, or 3) from a materials science perspective. MAX phases are a class of hexagonal-structure ternary carbides and nitrides ("X") of a transition metal ("M") and an A-group element. The most well known are Ti 2 AlC, Ti 3 SiC 2 , and Ti 4 AlN 3 . There are ~60 MAX phases with at least 9 discovered in the last five years alone. What makes the MAX phases fascinating and potentially useful is their remarkable combination of chemical, physical, electrical, and mechanical properties, which in many ways combine the characteristics of metals and ceramics. For example, MAX phases are typically resistant to oxidation and corrosion, elastically stiff, but at the same time they exhibit high thermal and electrical conductivities and are machinable. These properties stem from an inherently nanolaminated crystal structure, with M n+1 X n slabs intercalated with pure A-element layers. The research on MAX phases has been accelerated by the introduction of thin-film processing methods.Magnetron sputtering and arc deposition have been employed to synthesize single-crystal material by epitaxial growth, which enables studies of fundamental materials properties. However, the surface-initiated decomposition of M n+1 AX n thin films into MX compounds at temperatures of 1000-1100 °C is much lower than the decomposition temperatures typically reported for the corresponding bulk material. We also review the prospects for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates. While deposition of MAX phases from the archetypical Ti-Si-C and Ti-Al-N systems typically require synthesis temperatures of ~800 °C, recent results have demonstrated that V 2 GeC and Cr 2 AlC can be deposited at ~450 °C. Also, thermal spray of Ti 2 AlC powder has been used to produce thick coatings. We further treat progress in the use of first-principles calculations for predicting hypothetical MAX phases and their properties. Together with advances in processing and materials 3 analysis, this progress has led to recent discoveries of numerous new MAX phases such as Ti 4 SiC 3 , Ta 4 AlC 3 , and Ti 3 SnC 2 . Finally, important future research directions are discussed. These include charting the unknown regions in phase diagrams to discover new equilibrium and metastable phases, as well as research challenges in understanding their physical properties, such as the effects of anisotropy, impurities, and vacancies on the electrical properties, and unexplored properties such as superconductivity, magnetism, and optics. 4

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Section: Applicationsmentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

The M+1AX phases: Materials science and thin-film processing

et al. 2010

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“…Ti 3 SiC 2 is known to form after high temperature annealing of Ti-, and Ti/Albased contacts on SiC [6][7][8][9][10]. In recent publications, we have reported on the ohmic contact properties of sputter-deposited Ti 3 SiC 2 on 4H-SiC(0001), and investigated the step-flow growth mode of epitaxially grown Ti 3 SiC 2 layers on SiC [11,12].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Buchholt

Eklund

Jensen

et al. 2012

Journal of Crystal Growth

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Epitaxial Ti 3 GeC 2 thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti 3 GeC 2 films grow by lateral step-flow with {11 2 0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.

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“…[8][9][10][11][12][13] Microstructures of the TiAl-based ohmic contacts were investigated by transmission electron microscopy (TEM) observations, and these contacts were found to grow Ti 3 SiC 2 on the SiC surface at high temperature of 1000 C in high vacuum. [14][15][16] From TEM observations and electrical properties, it is concluded that formation of the Ti 3 SiC 2 layers was required to achieve excellent ohmic properties for p-type SiC, resulting in reduction of height of Schottky barrier formed at the metal/SiC interface and enhancement of carrier transportation across the contact interfaces. 14,17) However, the role of the Ti 3 SiC 2 /SiC interface on mechanism by which the Schottky barrier height reduce has not been well clarified yet.…”

Section: Introductionmentioning

confidence: 99%

Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC

et al. 2009

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Growth and microstructure of ternary Ti 3 SiC 2 compound layers on 4H-SiC, which play am important role in formation of TiAl-based ohmic contacts to p-type SiC, were investigated in this study. The Ti 3 SiC 2 layer was fabricated by deposition of Ti/Al contacts (where a slash ''/'' indicates the deposition sequence) on the 4H-SiC(0001) substrate and subsequent rapid thermal anneal at 1000 C in ultra high vacuum. After annealing, reaction products and microstructure of the Ti 3 SiC 2 layer were investigated by X ray diffraction analysis and transmission electron microscopy observations in order to understand the growth processes of the Ti 3 SiC 2 layer and determination of the Ti 3 SiC 2 /4H-SiC interface structure. The Ti 3 SiC 2 layers with hexagonal plate shape were observed to grow epitaxially on the SiC(0001) surface by anisotropic lateral growth process. The interface was found to have a hetero-epitaxial orientation relationship of ð0001Þ TSC ==ð0001Þ S and ½0 1 110 TSC == ½0 1 110 S where TSC and S represent Ti 3 SiC 2 and 4H-SiC, respectively, and have well-defined ledge-terrace structures with low density of misfit dislocations due to an extremely low lattice mismatch of 0.4% between Ti 3 SiC 2 and 4H-SiC.

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Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC

Cited by 62 publications

References 15 publications

The M+1AX phases: Materials science and thin-film processing

The M+1AX phases: Materials science and thin-film processing

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC

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