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           anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

Fujimoto, Masayuki Y.; Koyama, Hiroshi; Konagai, Masashi; Hosoi, Yasunari; Ishihara, Kengo; Ohnishi, Shigeo; Awaya, Nobuyoshi

doi:10.1063/1.2397006

Cited by 215 publications

(127 citation statements)

References 19 publications

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“…The reproducible RS is achieved by repeating SET and RESET processes. Although the RS phenomena and their reproducibility were reported and there are many analogical reasoning of reversible RS in metal oxides 2,9,11,12,[14][15][16][17][18][19][20][21][22][23][24] , their switching mechanism has not yet been clarified. To reveal the RS mechanism, direct observations of conducting filaments are required.…”

Section: Introductionmentioning

confidence: 99%

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Kondo

Arita

Fujii

et al. 2011

Jpn. J. Appl. Phys.

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We succeeded to observe the "conduction spot" (CS) in the capacitor structure ReRAM, which includes a conductive filament. In this study, we used NiO prepared by thermal oxidation at high temperature as 800°C. It requires a forming process by extra high voltage, which partly removes the top electrode from the resistance switched area.These experiments enabled us to observe the conductive filament directly in CS on NiO ReRAM by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). From SEM images, CSs seem to be produced by some kind of breakdown, but we confirmed the reproducible resistance switching at least 50 cycles after the CS generation. By means of energy dispersive X-ray spectroscopy (EDX) with TEM observations, drastic oxygen reduction was recognized in local area within CS of NiO films. Moreover, the CS area depended on the injection power for forming. These experimental data suggest that miniaturization of ReRAM will be achieved by reducing the injection power for forming. *

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Section: Introductionmentioning

confidence: 99%

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Kondo

Arita

Fujii

et al. 2011

Jpn. J. Appl. Phys.

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“…Mott transition is also proposed as the mechanism for the bipolar resistive switching observed in a 2.5 nm anatase TiO 2 layer grown by oxidation of a TiN diffusion barrier [48,49]. Mott transition may be triggered by the increase in donor concentration caused by the electron injection from the top electrode (Pt), which is accompanied by oxygen vacancy formation and O 2 migration in the anatase TiO 2 layer.…”

Section: Resistive Switching Induced By Mott Transitionmentioning

confidence: 99%

“…The reported values of switching parameters of the Mott transition devices discussed above are summarized in Table 9.1 [19,46,48,49,[51][52][53].…”

Section: Resistive Switching Induced By Mott Transitionmentioning

confidence: 99%

Electronic Effect Resistive Switching Memories

Chen

2014

Emerging Nanoelectronic Devices

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“…High-resolution scanning transmission electron microscopy characterization of TiO2 anatase nanolayer of about 2.5 nm thick on TiN thin film suggested that the resistive change was due to the Mott transition in the TiO2 anatase nanolayer which could relate to the formation of filament paths. 25) From different switching behaviors of Pt/TiO2/Pt and Ir(O)/TiO2/ Pt, the mechanism of resistance switching of TiO2 thin films was suggested to be local rupture and recovery of conducting filaments near the anode interface. 27) Further study indicated that only small part of the conducting filaments in the thin films near the anode contributed to the resistance switching.…”

Section: Tio 2 Zro 2 and Hfo 2 Thin Filmsmentioning

confidence: 99%

Transition metal oxide thin films for nonvolatile resistive random access memory applications

Bao

2009

J. Ceram. Soc. Japan

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Resistive random access memory (RRAM) based on reversible bistable resistance switching effect is attracting much attention for its superior properties such as nonvolatility, long retention time, simple device structure, small size, and low operating voltage. The unique resistance switching properties have been observed in some binary transition metal oxides, perovskite oxides, and organic molecular materials. This paper briefly reviews the status and new progress on binary transition metal oxide thin film materials such as NiO, TiO2, ZrO2, ZnO, and their multilayered thin films and metal nanocomposite thin films, for resistive random access memory applications, and also presents some of our own research work in this field. There is no doubt that study on transition metal oxide thin films for RRAM application will have been a topic of great interest in the forthcoming years, and it is expected that better understanding of physical mechanisms for the bistable resistance switching of the transition metal oxide thin films sandwiched between two metal electrodes can be achieved.

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Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

Cited by 215 publications

References 19 publications

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Electronic Effect Resistive Switching Memories

Transition metal oxide thin films for nonvolatile resistive random access memory applications

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