Ti-doping induced antiferroelectric to ferroelectric phase transition and electrical properties in Sm-PbZrO3 thin films

Thatikonda, Santhosh Kumar; Huang, Wenhua; Du, Xingru; Yao, Chuangye; Ke, Yingying; Wu, Jiang; Qin, Ni; Bao, Dinghua

doi:10.1016/j.cap.2021.01.006

Cited by 5 publications

(2 citation statements)

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“…28 Such behavior can be explained by a ferroelastic 90°domain switching, which is also suspected to occur in undoped HfO 2 films on TiN electrodes. 48 Second, there are signs of antiferroelectric behavior in the C−V characteristics, manifested by a double peak (Figure 5a) in both the negative and positive regions of the applied electric 54 For the negative range of the electric field, an antiferroelectric typical double peak can be seen more clearly, whereas the coercive fields for the positive electric fields appear to be slightly higher (Figure 5). A possible explanation for this observation could be a phase transition from an orthorhombic phase with weak antiferroelectric behavior to an orthorhombic phase with ferroelectric behavior.…”

Section: ■ Experimental Sectionmentioning

confidence: 96%

Domain Wall Movement in Undoped Ferroelectric HfO₂: A Rayleigh Analysis

Marquardt

Petersen

Gronenberg

et al. 2023

ACS Appl. Electron. Mater.

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The discovery of ferroelectricity in doped HfO2 in 2011 gave rise to quite a stir in the scientific world that persists up to this day. The complementary metal oxide semiconductor compatibility, as well as good scalability, enables versatile applications ranging from ferroelectric field effect transistors to ferroelectric tunnel junctions and neuromorphic devices. Stabilizing the metastable polar orthorhombic phase with space group Pca21-phase, which is responsible for the ferroelectricity in HfO2, is still challenging. We demonstrate for the first time a sputter deposition of undoped ferroelectric HfO2 on superconducting NbN electrodes, with a remanent polarization of 6.4 μC/cm2. Grazing incident X-ray diffraction on the layer structure, dynamic hysteresis measurements, and electron energy loss spectroscopy on fabricated devices indicate a HfO2 layer with low oxygen deficiency. Furthermore, no evidence of interdiffusion of oxygen or nitrogen at the interfaces is found. A sudden “wake-up” for the transition from the dielectric state to the ferroelectric state as well as no classical fatigue effect for the degradation of the ferroelectric performance are observed. These analyses are extended by an investigation of Rayleigh behavior using impedance spectroscopy. In that way, the domain wall flexibility is quantified and classified within different regimes of the various domain wall motions.

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Section: ■ Experimental Sectionmentioning

confidence: 96%

Domain Wall Movement in Undoped Ferroelectric HfO₂: A Rayleigh Analysis

Marquardt

Petersen

Gronenberg

et al. 2023

ACS Appl. Electron. Mater.

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“…Anti‐ferroelectric or ferroelectric state can be adjusted or retained via element modification, which is an effective way to improve the energy storage property of films. [ 60 ] Element modification is the doping of other element in lattice site, involving the replacement of atoms at A‐, B‐, or AB‐site atoms. In the PZ anti‐ferroelectric films, Pb 2+ and Zr 4+ occupy the A‐ and B‐sites, respectively.…”

Section: Element Modificationmentioning

confidence: 99%

PbZrO₃‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review

Wang

Yang

et al. 2023

Adv Materials Technologies

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Energy storage capacitors occupy a large proportion in the pulse power equipment, and they play an important role nowadays. In recent years, anti‐ferroelectric materials have attracted increasing attention of researchers due to their high energy storage density. Compared with the lead‐free anti‐ferroelectric materials, PbZrO3 (PZ)‐based anti‐ferroelectric films are defined as promising electrical energy storage devices for pulsed power systems due to their ultrahigh energy storage density. During the past decade, numerous studies have been reported to develop high‐performance PZ‐based anti‐ferroelectric thin films for electrical energy storage applications. This review focuses on the recent progress of PZ‐based anti‐ferroelectric films for energy storage, and provides various ways, such as element modification (replacing of one element in the ABO3 structure by another element), composite materials (adding secondary phase into PZ films to form composite films), and process improvement (such as the tuning of different bottom electrodes), to improve their energy storage density. Finally, the problems and future development directions of the PZ‐based films are raised.

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Enhancing structural properties of simple perovskite materials based on zirconate and titanate prepared by sol-gel method

Choukchou Braham,

Kermad,

El Korso

et al. 2023

Materials Chemistry and Physics

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Ti-doping induced antiferroelectric to ferroelectric phase transition and electrical properties in Sm-PbZrO3 thin films

Cited by 5 publications

References 45 publications

Domain Wall Movement in Undoped Ferroelectric HfO₂: A Rayleigh Analysis

Domain Wall Movement in Undoped Ferroelectric HfO₂: A Rayleigh Analysis

PbZrO₃‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review

Enhancing structural properties of simple perovskite materials based on zirconate and titanate prepared by sol-gel method

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Ti-doping induced antiferroelectric to ferroelectric phase transition and electrical properties in Sm-PbZrO3 thin films

Cited by 5 publications

References 45 publications

Domain Wall Movement in Undoped Ferroelectric HfO2: A Rayleigh Analysis

Domain Wall Movement in Undoped Ferroelectric HfO2: A Rayleigh Analysis

PbZrO3‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review

Enhancing structural properties of simple perovskite materials based on zirconate and titanate prepared by sol-gel method

Contact Info

Product

Resources

About

Domain Wall Movement in Undoped Ferroelectric HfO₂: A Rayleigh Analysis

Domain Wall Movement in Undoped Ferroelectric HfO₂: A Rayleigh Analysis

PbZrO₃‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review