Ti doped ZnO thin film based UV photodetector: Fabrication and characterization

Fabrication of flexible ultraviolet photodetectors using an all-spray-coating process

“…12 However, these studies used the spray coating method to deposit only partial, but not entire, layers. Thus, in order to enable general users to fabricate DIY-type devices on any substrate and in any location, processes should be developed that incorporate only painting, spray, or pen-drawing without requiring the use of vacuum processes.…”

“…[6][7][8] For this reason, photodetectors commonly use materials such as ZnO, SnO 2 , ZnO/CdTe, ZnO/Ti,TiO 2 , GaN, and Ga 2 O 3 . [9][10][11][12][13][14][15] In order to fabricate photodetectors, expensive or complex photolithography and vacuum processes are required, which limits their application and environment for general users. To address this limitation, dispensing methods, such as airbrush spray and the spray pyrolysis process, were introduced to form Ag nanowire and carbon a Authors to whom correspondence should be addressed: shju@kgu.ac.kr 2158-3226/2016/6(4)/045218/7 6, 045218-1 © Author(s) 2016.…”

ZnxZryOz thin films grown by DC magnetron sputtering

“…On the other hand, ZnO is also an interesting transparent n‐type semiconductor, with a direct band gap of 3.37 eV at RT, a large excitation binding energy (60 meV), and numerous potential applications in the fabrication of microelectronic and optoelectronic devices, both as a transparent conductive oxide and as a semiconductor . Zinc oxide can be easily doped with metals to extend its possible applications to solar cells, panel displays, photodetectors, gas sensors, and diode fields . There are a number of reports examining ZnO films doped with group III elements, such as Al, Ga, and In trivalent cations .…”

Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

“…Among the wide bandgap semiconductor materials, zinc oxide (ZnO), an inherent n-type semiconductor, has attracted a great deal of interest for next-generation electronic and optoelectronic devices including photovoltaics, light-emitting diodes and photodetectors [26][27][28][29][30][31][32][33][34]. ZnO exhibits excellent electrical and optical properties and high chemical stability [35]. In particular, its favourable features of direct-type optical bandgap of 3.37 eV at room temperature, high exciton binding energy (60 meV), non-toxicity, high radiation hardness and inexpensive and facile production routes make ZnO an ideal choice for the realisation of cost-effective high-performance optoelectronic devices [35].…”

“…ZnO exhibits excellent electrical and optical properties and high chemical stability [35]. In particular, its favourable features of direct-type optical bandgap of 3.37 eV at room temperature, high exciton binding energy (60 meV), non-toxicity, high radiation hardness and inexpensive and facile production routes make ZnO an ideal choice for the realisation of cost-effective high-performance optoelectronic devices [35]. Incorporation of different elements into ZnO can lead to remarkable changes in the electrical and optical properties of the ZnO-related optoelectronic devices [36][37][38][39].…”