2009
DOI: 10.1016/j.cplett.2009.09.062
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Ti-doped AlN potential n-type ferromagnetic semiconductor: Density functional calculations

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Cited by 28 publications
(16 citation statements)
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“…As reported by Fan et al and Malindretos et al, oxygen point defects including O N (O substituting for N) and O i (isolated O interstitials) in Ti-doped AlN [10] and Gd-doped GaN [39] could induce intrinsic ferromagnetic order. The element O is the most common unintentional dopants in III-V semiconductors.…”
Section: Magnetic Property Analysismentioning
confidence: 74%
See 1 more Smart Citation
“…As reported by Fan et al and Malindretos et al, oxygen point defects including O N (O substituting for N) and O i (isolated O interstitials) in Ti-doped AlN [10] and Gd-doped GaN [39] could induce intrinsic ferromagnetic order. The element O is the most common unintentional dopants in III-V semiconductors.…”
Section: Magnetic Property Analysismentioning
confidence: 74%
“…On the other hand, there has been increasing evidence that traditional magnetic elements are not the sole source in inducing intrinsic magnetism; Recently, theoretical studies revealed that Mg, Ti and C are promising nonmagnetic elements for preparing AlN DMSs [9][10][11]. Since such dopants are intrinsically nonmagnetic, their precipitates do not contribute to ferromagnetism.…”
Section: Introductionmentioning
confidence: 97%
“…There have been extensive theoretical investigations to study potential applications of semiconductors for realization of DMS [10][11][12][13][14][15]. The first principles calculations involving on-site coulomb interaction predicted reasonable magnetic interaction in Mn, V and Cr doped AlN [11].…”
Section: Introductionmentioning
confidence: 99%
“…Tetrahedrally bonded CrAlN of 5-10% Cr has demonstrated ferromagnetism with a Curie temperature of 900K [125][126][127][128] despite AlN being non-magnetic and CrN being antiferromagnetic/paramagnetic [92,131]. Other works have suggested ferromagnetism in AlN with Ti impurities [132] as well. This class of materials is generally known as Dilute Magnetic Semiconductors (DMS) and has seen some interest through the development of materials for spintronic applications but these considerations have not been brought to the study of hard coating materials.…”
Section: Pressure and Temperature Effects On (Tial)nmentioning
confidence: 97%