Ti
                Al
                N
                ∕
                Ti
                Al
                O
                N
                ∕
                  Si
                  3
                  N
                  4
           tandem absorber for high temperature solar selective applications

Barshilia, Harish C.; Selvakumar, N.; Rajam, K.S.; Rao, D.V. Sridhara; Muraleedharan, K.; Biswas, A.

doi:10.1063/1.2387897

Cited by 128 publications

(68 citation statements)

References 11 publications

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“…[3][4][5][6]8,9,20,[30][31][32][33][34] Spectrally selective behaviour of transition metal nitride lms have been previously studied. 10 Studies of magnetron sputtered TiAlN/ TiAlON lms synthesized onto a metal substrate exhibited high absorptance and low emittance were reported by Barshilia et al 5 The absorptance of the lms was substantially enhanced to 0.95 by adding a Si 3 N 4 anti-reective coating on the top of these lms.…”

Section: -29mentioning

confidence: 99%

“…Various types of metal nitrides based selective solar surfaces such as TiN, ZrN, HfN, TiAlN, TiAlON, NbAlN, NbAlON, MoAlN, and WAlN have been investigated by numerous groups. [1][2][3][4][5][6][7][8][9][10][11] Over the past few years, transition metal nitride based thin lms have attracted signicant research interest as selective solar surfaces in solar thermal conversion devices. Generally, the energy conversion performance of a selective solar surface depends on the lm materials, lm design and fabrication technique used.…”

Section: Introductionmentioning

confidence: 99%

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Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered Ti_xM_1−x−yN_yfilms

et al. 2016

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steel substrates via closed field unbalanced magnetron sputtering technology. These were investigated using XRD, SEM, XPS, UV-Vis, FTIR and nanoindentation techniques. Analysis of the optical properties showed the solar absorptance, in the visible range, of the Ti x M 1ÀxÀy N y films improved significantly from 51% to 81% with AlSi-doping and an increase of solar absorptance of up to 66% was recorded from films doped with Al. Moreover, the Al doping can reduce the thermal emittance in the infrared range from 6.06% to 5.11%, whereas doping with AlSi reduces the emittance to ca. 3.58%. The highest solar selectivity of 22.63 was achieved with TiAlSiN films. Mechanical studies showed enhanced hardness by $32%; enhanced yield strength by $16% and enhanced plastic deformation by $110% of Al and AlSi doped TiN matrix. IntroductionA spectrally selective surface is, generally, used to improve the photothermal conversion performance and, as such, it possesses two characteristics: high absorptance, a in the visible region of solar spectrum (0.3 to 2.5 mm) and low emittance, 3, (i.e., high reection) in the infra-red (IR) region ($2.5 mm) at operating temperatures. An excellent selective surface maximises the absorption of incoming photons in the visible region and minimises photon emission through thermal radiation in the IR energy region. Such a surface can be designed by an absorber-reector assembly. In such an approach, the reector is coated with a highly absorbing layer over the visible solar spectrum, while the infrared region is made transparent. Various types of metal nitrides based selective solar surfaces such as TiN, ZrN, HfN, TiAlN, TiAlON, NbAlN, NbAlON, MoAlN, and WAlN have been investigated by numerous groups.1-11 Over the past few years, transition metal nitride based thin lms have attracted signicant research interest as selective solar surfaces in solar thermal conversion devices. Generally, the energy conversion performance of a selective solar surface depends on the lm materials, lm design and fabrication technique used. A multi-layer lm stack with mixture of metal nitride, metal oxide and metal oxynitride lms e.g., TiAlN/AlON, and TiAl/ TiAlN/TiAlON/TiAlO has been explored for the potential commercial development of selective solar surfaces.3,12 TiAlN/ TiAlON/Si 3 N 4 selective absorbers have been produced on various substrates such as copper, nickel, stainless steel, glass and nimonic alloys.13 However, these materials are yet to be commercialized for solar energy conversion applications. View Article OnlineView Journal | View Issue solar selective surface applications, transition metal oxides based thin lms also received signicant research interests. 15-19Various synthesis methods such as evaporation, electrodeposition, chemical conversion, chemical vapour deposition and magnetron sputtering have been employed in manufacturing selective solar surfaces. Owing to its advantages in large area deposition, dry, clean and environment friendly, magnetron sputtering technique is widely used for syn...

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Section: -29mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered Ti_xM_1−x−yN_yfilms

et al. 2016

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“…Thirdly, the reactive sputtering using the metal target can easily control the binary film composition with components and contents of gas injection. Lastly it has the advantage of gaining a high deposition rate, and it is able to regulate the thickness of thin films [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Growth and Properties of CrN_x/TiN_y/Al Based on N₂Gas Flow Rate for Solar Thermal Applications

Ju¹,

Jang²,

Jang³

et al. 2016

Transactions on Electrical and Electronic Materials

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The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N 2 gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

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“…For these purposes, it is necessary to study and develop new types of solar selective absorbers and materials with even higher efficiencies. An effective solar absorber should have a high absorptance in the wavelength range of 0.3 μm to 2.5 μm, and a low emittance above a wavelength of 2.5 μm at higher operating temperatures [2]; therefore, the coatings of the solar absorber must have a high absorptance over the visible wavelength range and a low emittance in the infrared region. In recent years, further attention has been focused on the solar selective absorber for solar heating applications due to the depletion of fossil fuels.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characteristics of Al₂O₃/AlCrNO/Al Solar Selective Absorbers with Gas Mixtures

Park¹,

Han²,

Kim³

et al. 2015

Transactions on Electrical and Electronic Materials

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AlCrNO cermet films were prepared on aluminum substrates using a DC-reactive magnetron sputtering method and a water-cooled Al:Cr target. The Al 2 O 3 /AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF)/Al/substrate of the 5 multilayers was prepared according to the Ar and (N 2 + O 2 ) gas-mixture rates. The Al 2 O 3 of the top layer is the anti-reflection layer of triple AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF) layers, and an Al metal forms the infrared reflection layer. In this study, the crystallinity and surface properties of the AlCrNO thin films were estimated using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM), while the composition of the thin films was systematically investigated using Auger electron spectroscopy (AES). The optical properties of the wavelength spectrum were recorded using UH4150 spectrophotometry (UV-Vis-NIR) at a range of 0.3 μm to 2.5 μm.

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Ti Al N ∕ Ti Al O N ∕ Si 3 N 4 tandem absorber for high temperature solar selective applications

Cited by 128 publications

References 11 publications

Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered Ti_xM_1−x−yN_yfilms

Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered Ti_xM_1−x−yN_yfilms

Growth and Properties of CrN_x/TiN_y/Al Based on N₂Gas Flow Rate for Solar Thermal Applications

Growth and Characteristics of Al₂O₃/AlCrNO/Al Solar Selective Absorbers with Gas Mixtures

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Ti Al N ∕ Ti Al O N ∕ Si 3 N 4 tandem absorber for high temperature solar selective applications

Cited by 128 publications

References 11 publications

Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered TixM1−x−yNyfilms

Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered TixM1−x−yNyfilms

Growth and Properties of CrNx/TiNy/Al Based on N2Gas Flow Rate for Solar Thermal Applications

Growth and Characteristics of Al2O3/AlCrNO/Al Solar Selective Absorbers with Gas Mixtures

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Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered Ti_xM_1−x−yN_yfilms

Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered Ti_xM_1−x−yN_yfilms

Growth and Properties of CrN_x/TiN_y/Al Based on N₂Gas Flow Rate for Solar Thermal Applications

Growth and Characteristics of Al₂O₃/AlCrNO/Al Solar Selective Absorbers with Gas Mixtures