THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

Deal, W.R.; Mei, X.B.; Leong, K.M.K.H.; Radisic, V.; Sarkozy, S.; Lai, R.

doi:10.1109/tthz.2011.2159539

Cited by 196 publications

(96 citation statements)

References 18 publications

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“…Different from the spin-based electronic transistor based on Rashba spin-orbit interactions [89], this spin-based photonic transistor based on spin-cavity interactions does not suffer from the limitation from the RC time constants and the transit time, so it has the potential to break the THz barrier for all electronic transistors including the state-of-the-art high electron mobility transistors (HEMTs) [38,39].…”

Section: Photonic Transistormentioning

confidence: 99%

“…The large gain is attributed to the linear giant circular birefringence (GCB) that is robust against classical and quantum fluctuations. The speed which is determined by the cavity lifetime has the potential to break the THz barrier for electronic transistors [38,39]. Thanks to the linear GCB, this SPT is genuinely a quantum transistor with the duality as a quantum gate for quantum information processing and a transistor for classical information processing, thus, it could be more powerful than the conventional transistors.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

Hu¹

2016

Phys. Rev. B

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The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a novel design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect -giant circular birefringence (GCB) induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet -a mixture of all-optical Internet with quantum Internet.

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Section: Photonic Transistormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

Hu¹

2016

Phys. Rev. B

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“…Due to the excellent high frequency and low noise performance, InP-based PHEMT is considered to be a unique candidate for applications beyond 100 GHz. Many high performance InP-based PHEMTs have been reported [1,2,3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications

Wang

et al. 2015

IEICE Electron. Express

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70-nm T-gate InP-based low noise In 0.52 Al 0.48 As/In 0.65 Ga 0.35 As pseudomorphic high electron mobility transistor (PHEMT) with well-balanced cutoff frequency f t and maximum oscillation frequency f max were designed and fabricated. DC, RF, and noise characterizations are demonstrated. The maximum saturation current density I dss and maximum extrinsic transconductance g m,max are measured to be 894 mA/mm and 1640 mS/mm, respectively. And the extrapolated f t and f max based on inflection point were 247 GHz and 392 GHz, respectively. Due to the disadvantages of traditionally used Y-factor method, the new cold-source method was adopted to measure the noise parameters. The minimum noise figure (NF min ) is 1 dB at 30 GHz associated with a gain of 15 dB at V ds of 0.8 V and I ds of 17 mA. These excellent results make this InP-based PHEMT one of the most suitable devices for millimeter wave low noise applications.

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“…They are of great interest for high-resolution imaging, environmental sensor, security detection, broadband satellite communication applications [3]. InP-based PHEMTs have shown more excellent performance of high-gain, wide-band, and low noise than the GaAs-based beyond 100 GHz, thus MMICs based on InP PHEMTs have been reported over the world [1,3,4,5,6,7,8].…”

Section: Introductionmentioning

confidence: 99%

A novel large-signal model for InP MMIC applications at 110 GHz

Wang

Luo

Zhuo-Bin

et al. 2015

IEICE Electron. Express

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This paper presented the development of a novel large-signal equivalent circuit model for InP-based pseudomorphic high electron mobility transistor (PHEMT) MMIC applications beyond 100 GHz. A new set of I-V functions was built in the large-signal model to depict accurately the measured I-V results of this device. The convergence of the model was good during the HB (harmonic balance) simulation. To verify the feasibility of the large-signal model, a 110 GHz MMIC amplifier based on this large-signal model was designed and fabricated, the on-wafer measured large-signal results, which include Pout, Gain and PAE (Power Add Efficiency), were consistent with the simulated ones at 110 GHz. Thus, this new large-signal model has a great potential for InP MMIC applications beyond 100 GHz.

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THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

Cited by 196 publications

References 18 publications

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications

A novel large-signal model for InP MMIC applications at 110 GHz

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