THz Hot-Electron Micro-Bolometer Based on Low-Mobility 2-DEG in GaN Heterostructure

Choi, Jae Kyu; Mitin, Vladimir; Ramaswamy, Rahul; Pogrebnyak, V. A.; Pakmehr, Mehdi; Muravjov, A. V.; Shur, M. S.; Gill, John; Mehdi, Imran; Karasik, Boris S.; Sergeev, Andrei

doi:10.1109/jsen.2012.2224334

Cited by 17 publications

(14 citation statements)

References 48 publications

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“…The measured differential thermal resistivity of this graphene device in the electron branch of transfer IV characteristics has an order of 5 X/K, rather close to typical values for GaN heterostructure microbolometers. 22 The observed asymmetry of the bolometric response in respect to Dirac point is explained by the asymmetry of the transfer current-voltage characteristics temperature dependence, which is shown in the inset to Fig. 3(a).…”

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confidence: 90%

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

et al. 2013

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International audiencePolarization dependence analysis of back-gated graphene field-effect transistor terahertz responsivity at frequencies ranging from 1.63 to 3.11 THz reveals two independent mechanisms of THz detection by graphene transistor: plasmonic, associated with the transistor nonlinearity, and bolometric, caused by graphene sheet temperature increase due to THz radiation absorption. In the bolometric regime, electron and hole branches demonstrate a very different response to THz radiation, which we link to the asymmetry of the current-voltage characteristics temperature dependence with respect to the Dirac point. Obtained results are important for development of high-efficiency graphene THz detectors

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confidence: 90%

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

et al. 2013

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“…Such detectors on the base of vertical multiple-QW structures were proposed and realized a long time ago(see Refs. [50] and [51], respectively, as well as a recent paper [52]). The THz detectors based on lateral structures with the barrier regions formed by the metal gates were also realized [53,54] (see also Ref.…”

Section: Discussionmentioning

confidence: 94%

Graphene vertical hot-electron terahertz detectors

Ryzhii

Satou

Otsuji

et al. 2014

Journal of Applied Physics

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We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation of these detectors is enabled by the thermionic emissions from the GLs enhanced by the electrons heated by incoming THz radiation. Hence, Hence, these detectors are the hot-electron bolometric detectors. The electron heating is primarily associated with the intraband absorption (the Drude absorption). In the frame of the developed model, we calculate the responsivity and detectivity as functions of the photon energy, GL doping, and the applied voltage for the GL detectors (GLDs) with different number of GLs. The detectors based on the cascade multiple-GL structures can exhibit a substantial photoelectric gain resulting in the elevated responsivity and detectivity. The advantages of the THz detectors under consideration are associated with their high sensitivity to the normal incident radiation and efficient operation at room temperature at the low end of the THz frequency range. Such GLDs with a metal grating, supporting the excitation of plasma oscillations in the GL-structures by the incident THz radiation, can exhibit a strong resonant response at the frequencies of several THz (in the range, where the operation of the conventional detectors based on A3B5 materials, in particular THz quantum-well detectors, is hindered due to a strong optical phonon radiation absorption in such materials). We also evaluate also the characteristics of GLDs in the mid-and far-infrared ranges where the electron heating is due to the interband absorption in GLs.

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“…Gallium Nitride (GaN) innovation is typically regarded for high-power applications among others [208]. Photonic devices are being used to originate and identify terahertz frequency radiation [209]- [212].…”

Section: Antenna For Em Nanocommunicationmentioning

confidence: 99%

Electromagnetic Nanocommunication Networks: Principles, Applications, and Challenges

Kabir¹,

Islam

Shrestha

et al. 2021

IEEE Access

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Nanoscale devices, also called nanomachines, form communication networks and cooperate with each other so that they can be used to perform complicated tasks. Such networks of nanodevices, named nanonetworks, envisioned to serve the functionality and performance of today's Internet. This paper presents a comparative review of the state-of-the-art electromagnetic (EM) nanonetworks highlighting their potentials and challenges in a comprehensive manner. We first introduce the promising areas of applications of nanonetworks; therein, we explain how it can be useful in biomedical fields, environmental domains, consumer products, military systems, and on-chip wireless communications. Then, the survey focuses on the basic principles of fundamental physical layer issues enabling nanonetworks; the discussion includes frequency bands, modulation and demodulation, and EM properties of nanoparticles. Subsequently, the study provides an overview of transmission characteristics including channels, channel coding, and energy constraint nature of nanonetworks. Furthermore, we provide an in-depth discussion on nanoantenna highlighting its variants and their characteristics; give an overview of network layer issues; and discuss the security issues in EM nanonetworks. The study argues that despite the significant recent development of EM communication as one of the most desired modes of nano communications, the limited capabilities of nanomachines introduce a new set of challenges and unique requirements and pose unseen characteristics that need to be deliberately addressed. On that, the review finally provides a critical discussion on the applicability of EM mode for nano communication networks highlighting the future challenges with a set of perspectives of possible solutions. Molecular communications, electromagnetic communications, nanonetworks, terahertz (THz), nanoantenna, applications of EM nanocommunication, challenges of EM nanocommunication. INDEX TERMS

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THz Hot-Electron Micro-Bolometer Based on Low-Mobility 2-DEG in GaN Heterostructure

Cited by 17 publications

References 48 publications

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

Graphene vertical hot-electron terahertz detectors

Electromagnetic Nanocommunication Networks: Principles, Applications, and Challenges

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