2013
DOI: 10.1002/adom.201300221
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THz Generation and Detection on Dirac Fermions in Topological Insulators

Abstract: THz radiation is generated from topological insulators using femtosecond laser pulses. Two‐channel free carrier absorption with bulk and surface carriers is indispensable to explaining the strong dependence of THz emission power on the carrier concentration. The characteristics of THz emission provide valuable information regarding the fundamental properties of Dirac fermions.

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Cited by 54 publications
(49 citation statements)
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“…Therefore, it cannot arise from the initial optical transition. In fact, previous works on Bi 2 Se 3 assigned the slow J yz component to a carrier drift in the surface field, consistent with the strong dependence of J yz on the doping level of Bi 2 Se 3 (refs 9, 10, 11). This notion is further supported by additional observations made in our experiment: first, the initial electron flow is directed toward the sample surface, along the direction of the space–charge field of our effectively n-doped sample.…”
Section: Resultssupporting
confidence: 83%
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“…Therefore, it cannot arise from the initial optical transition. In fact, previous works on Bi 2 Se 3 assigned the slow J yz component to a carrier drift in the surface field, consistent with the strong dependence of J yz on the doping level of Bi 2 Se 3 (refs 9, 10, 11). This notion is further supported by additional observations made in our experiment: first, the initial electron flow is directed toward the sample surface, along the direction of the space–charge field of our effectively n-doped sample.…”
Section: Resultssupporting
confidence: 83%
“…Since the slow component of J yz is a drift current of photoexcited carriers in the space–charge field91011, it is also localized in a depth of ∼15 nm. In addition, its amplitude changes during sample aging must arise from gradual modifications of E SC (Fig.…”
Section: Resultsmentioning
confidence: 99%
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“…However, while most of the researches have been concentrated on the thermoelectric [13] and optoelectronic properties [14,15], researches on the mechanical characterizations have not drawn equal attention. The mechanical properties of materials are sizedependent.…”
Section: Introductionmentioning
confidence: 99%