Threshold Voltage Shift Instability Induced by Plasma Charging Damage in MOSFETS with High-K Dielectric

Eriguchi, Koji; Kamei, Motohiro; Okada, Kenji; Ohta, Hiromichi; Ono, Ken

doi:10.1007/978-90-481-9379-0_7

Cited by 7 publications

(4 citation statements)

References 13 publications

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“…PID has been investigated extensively in terms of its influence on Si-based electronic devices such as complementary metal oxide semiconductor (CMOS) transistors because of the way these devices physically shrink to increase LSI packing density. The PIDs on CMOS transistors are categorized into three mechanisms: 10) charging, 11,12) radiation, [13][14][15] and physical damage. [16][17][18] Plasma charging damage is mainly a phenomenon of the high-field stressing of thin gate oxides during plasma processing.…”

Section: Introductionmentioning

confidence: 99%

Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma

Minami,

Tomiya,

Ishikawa

et al. 2011

Jpn. J. Appl. Phys.

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We examined the effect of radiation damage and annealing on the optical properties of nitrogen-gettered nearly IIa type synthetic diamonds. It was found that the 2.156 eV centre, whose absorption is usually very weak, appears in these diamonds as one of the dominant absorption features. A new vacancy-related vibronic absorption system with zero-phonon line at 3.420 eV was observed. A pronounced photochromic effect was established for the 1.945, 2.085, 2.156, 3.420 and 4.325 eV absorption bands. Of all these bands only the 2.156 eV band remains in the absorption spectra after a proper photoexcitation. In contrast, for similarly treated type Ib diamonds we did not reveal any photoinduced changes in the 1.945 eV band absorption. Based on the results of optical bleaching and thermal recovery experiments, we conclude that the assignment of the 2.156 eV centre to the neutral charge state of the nitrogen-vacancy defect needs further verification. § Corresponding author.

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Section: Introductionmentioning

confidence: 99%

Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma

Minami,

Tomiya,

Ishikawa

et al. 2011

Jpn. J. Appl. Phys.

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“…So far, all studies concerning the impact of plasma process on the gate dielectric were conducted about the Bulk technology [1,2,3]. In this work we propose to study the plasma induced damage(PID) on the FDSOI technology.…”

Section: Introductionmentioning

confidence: 99%

Plasma process inducing gate oxide breakdown in the FDSOI technology

Akbal

Ribes

Arfaoui

et al. 2014

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)

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In this work we investigated the plasma induced damage on the Fully Depleted SOI devices by attaching different antennas configurations to the gate and source/drain nodes. We find that some configuration induces gate dielectric breakdown by charging effect. To explain these results a circuit model was performed. The model simulations are compared to the experimental results and then the impact of the charging damage from plasma process on the FDSOI technology is described.

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“…As these charges flow through the conductive paths made of pre-existing metal lines, via and contacts, the undesirable discharging through vulnerable parts of the circuits, particularly through the transistor gate dielectric may lead to significant reliability concerns. For instance, in the dry etching step, scattering impinging ions and sputtered materials at the reaction surface cause more defects in the bulk fins [11,12]. To avoid the plasma charging event leading to irreversible damage to circuits, design rules that limit the size of metal structures are given.…”

Section: Introductionmentioning

confidence: 99%