Abstract:In this letter, the underlying physics of threshold voltage (Vth)
instability and the eventual device failure mechanism of 100V Schottky
p-GaN gate high electron mobility transistors (HEMTs) under repetitive
short-circuit (SC) stress with varied drain voltage (VDD= 40-70V) and SC
pulse duration (TSC=10 μs & 20 μs) is studied. In the lenient SC stress
with lower SC energy (e.g. SC stress @ VGS=6 V, VDD=40-70 V, TSC=10 μs),
the devices exhibit significantly positive Vth shift while the Vth
instability shows … Show more
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