Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes

Kitamura, M.; Kuzumoto, Yasutaka; Aomori, Shigeru; Kamura, Masakazu; Na, Jong Ho; Arakawa, Yasuhiko

doi:10.1063/1.3090489

Cited by 64 publications

(56 citation statements)

References 13 publications

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“…14 We use a similar yet different approach, compatible with our PaMS treatment of the gate oxide. The PaMS surfacetreatment is applied on the gate oxide by spin-coating after the definition of Au contacts by lithography.…”

Section: Organic Complementary Oscillators With Stage-delays Below 1 Smentioning

confidence: 99%

Organic complementary oscillators with stage-delays below 1 μs

Bode

Myny

Verreet

et al. 2010

Applied Physics Letters

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Recently, complex circuits of organic thin-film transistors have been shown. The use of complementary logic can significantly ease the design of large integrated circuits. However, the performance of complementary logic in organic thin-film technology has not been able to equivale that of unipolar logic, due to the difficulty to densely integrate and simultaneously optimize p-type and n-type transistors on a single substrate. Here, we develop an optimized complementary process for C60 n-type and pentacene p-type transistors, both having bottom-gate bottom-contact geometry. Using this complementary technology, we show ring-oscillators with a stage-delay below 1 μs at a supply-voltage of 20 V.

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Section: Organic Complementary Oscillators With Stage-delays Below 1 Smentioning

confidence: 99%

Organic complementary oscillators with stage-delays below 1 μs

Bode

Myny

Verreet

et al. 2010

Applied Physics Letters

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“… a) Some of the most widely adopted thiols for the modification of metal contacts in OFETs with indication of dipole moments represented in debye units D; here an arrow facing upward represent a dipole that facilitates electrons injection. Adapted with permission 221, 89. Copyright 2009, American Institute of Physics and WILEY‐VCH Verlag.…”

Section: Charge Injection In Ofetsmentioning

confidence: 99%

Charge Injection in Solution‐Processed Organic Field‐Effect Transistors: Physics, Models and Characterization Methods

2012

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A high-mobility organic semiconductor employed as the active material in a field-effect transistor does not guarantee per se that expectations of high performance are fulfilled. This is even truer if a downscaled, short channel is adopted. Only if contacts are able to provide the device with as much charge as it needs, with a negligible voltage drop across them, then high expectations can turn into high performances. It is a fact that this is not always the case in the field of organic electronics. In this review, we aim to offer a comprehensive overview on the subject of current injection in organic thin film transistors: physical principles concerning energy level (mis)alignment at interfaces, models describing charge injection, technologies for interface tuning, and techniques for characterizing devices. Finally, a survey of the most recent accomplishments in the field is given. Principles are described in general, but the technologies and survey emphasis is on solution processed transistors, because it is our opinion that scalable, roll-to-roll printing processing is one, if not the brightest, possible scenario for the future of organic electronics. With the exception of electrolyte-gated organic transistors, where impressively low width normalized resistances were reported (in the range of 10 Ω·cm), to date the lowest values reported for devices where the semiconductor is solution-processed and where the most common architectures are adopted, are ∼10 kΩ·cm for transistors with a field effect mobility in the 0.1-1 cm(2)/Vs range. Although these values represent the best case, they still pose a severe limitation for downscaling the channel lengths below a few micrometers, necessary for increasing the device switching speed. Moreover, techniques to lower contact resistances have been often developed on a case-by-case basis, depending on the materials, architecture and processing techniques. The lack of a standard strategy has hampered the progress of the field for a long time. Only recently, as the understanding of the rather complex physical processes at the metal/semiconductor interfaces has improved, more general approaches, with a validity that extends to several materials, are being proposed and successfully tested in the literature. Only a combined scientific and technological effort, on the one side to fully understand contact phenomena and on the other to completely master the tailoring of interfaces, will enable the development of advanced organic electronics applications and their widespread adoption in low-cost, large-area printed circuits.

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“…The treatment is described in detail elsewhere. 15 Finally, a 100-nm-thick C 60 layer was deposited at 120°C with a deposition rate of 0.02 nm/s on the channel region through a shadow mask. The channel width is 1 mm and the channel lengths are 2, 4, 6, and 10 m. A photograph of a C 60 TFT with L =2 m is shown in Fig.…”

Section: Function Generatormentioning

confidence: 99%

“…We have developed low threshold voltage C 60 TFTs using modified drain/source electrodes. 15 Thus, we expect high cutoff-frequency TFTs using the techniques for achieving low parasitic resistance and low threshold voltage.…”

mentioning

confidence: 99%

Current-gain cutoff frequencies above 10 MHz for organic thin-film transistors with high mobility and low parasitic capacitance

Kitamura

Arakawa

2009

Applied Physics Letters

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The current-gain cutoff frequency for bottom contact n-channel C60 thin-film transistors (TFTs) with channel lengths of 2–10 μm has been investigated. Patterned gate electrodes were adopted to reduce parasitic capacitance of the TFTs. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The estimated cutoff frequency increases consistently with reducing channel length. A maximum cutoff frequency of 20.0 MHz was obtained from a C60 TFT with a channel length of 2 μm and a saturation mobility of 1.11 cm2/V s.

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Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes

Cited by 64 publications

References 13 publications

Organic complementary oscillators with stage-delays below 1 μs

Organic complementary oscillators with stage-delays below 1 μs

Charge Injection in Solution‐Processed Organic Field‐Effect Transistors: Physics, Models and Characterization Methods

Current-gain cutoff frequencies above 10 MHz for organic thin-film transistors with high mobility and low parasitic capacitance

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