Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane

Zessin, Jakob; Xu, Zheng; Shin, Nara; Hambsch, Mike; Mannsfeld, Stefan C. B.

doi:10.1021/acsami.8b12346

Cited by 22 publications

(18 citation statements)

References 65 publications

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“…When positive bias is applied, the electrons are trapped at the DPP-DTT-O 2 complex. These trapped electrons induce p-doping, which can cause the positive shift of the threshold voltage [34]. In contrast, the V TH is observed to return towards zero voltage (negative direction), as the width of the pattern decreases, as shown in Figure 6b.…”

Section: Resultsmentioning

confidence: 95%

Semiconducting Polymer Nanowires with Highly Aligned Molecules for Polymer Field Effect Transistors

et al. 2022

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Conjugated polymers have emerged as promising materials for next-generation electronics. However, in spite of having several advantages, such as a low cost, large area processability and flexibility, polymer-based electronics have their own limitations concerning low electrical performance. To achieve high-performance polymer electronic devices, various strategies have been suggested, including aligning polymer backbones in the desired orientation. In the present paper, we report a simple patterning technique using a polydimethylsiloxane (PDMS) mold that can fabricate highly aligned nanowires of a diketopyrrolopyrrole (DPP)-based donor–acceptor-type copolymer (poly (diketopyrrolopyrrole-alt-thieno [3,2-b] thiophene), DPP-DTT) for high-performance field effect transistors. The morphology of the patterns was controlled by changing the concentration of the DPP-based copolymer solution (1, 3, 5 mg mL−1). The molecular alignment properties of three different patterns were observed with a polarized optical microscope, polarized UV-vis spectroscopy and an X-ray diffractometer. DPP-DTT nanowires made with 1 mg mL−1 solution are highly aligned and the polymer field-effect transistors based on nanowires exhibit more than a five times higher charge carrier mobility as compared to spin-coated film-based devices.

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Section: Resultsmentioning

confidence: 95%

Semiconducting Polymer Nanowires with Highly Aligned Molecules for Polymer Field Effect Transistors

et al. 2022

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“…Both the low-frequency C – f behavior and the direct current (DC) conductivity measurements on glass (Figure S4) suggest that additional mobile carriers exist at the TIPS-pentacene/InO x interface without needing to be electrostatically induced by a V G . It is well known that additional mobile charge carriers at the oxide interface have a significant impact on transistor V TH − and could thus naturally explain even a large shift of V TH as observed for the TCETFTs. However, if we attribute such mobile carriers to the TIPS-pentacene/InO x interface, then the following question would remain: why V TH of the EETFTs is not also very negative?…”

Section: Resultsmentioning

confidence: 96%

Multimode Operation of Organic–Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films

Tang

Zessin

Talnack

et al. 2021

ACS Appl. Mater. Interfaces

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Solution-processed metal oxide (MO) thin films have been extensively studied for use in thin-film transistors (TFTs) due to their high optical transparency, simplicity of fabrication methods, and high electron mobility. Here, we report, for the first time, the improvement of the electronic properties of solution-processed indium oxide (InO x ) films by the subsequent addition of an organic p-type semiconductor material, here 6,13bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), yielding organic−inorganic hybrid TFTs. The addition of TIPS-pentacene not only improves the electron mobility by enhancing the charge carrier percolation pathways but also improves the electronic and temporal stability of the I DS (V G ) characteristics as well as reduces the number of required spin-coating steps of the InO x precursor solution. Very interestingly, the introduction of 10 nm TIPSpentacene films on top of 15 nm InO x layers allows the fabrication of either enhancement-or depletion-mode devices with only minimal changes to the fabrication process. Specifically, we find that when the TIPS-pentacene layer is added on top of the source/ drain electrodes, resulting in devices with embedded source/drain electrodes [embedded electrode TFTs (EETFTs)], the devices exhibit an enhancement-mode behavior with an average mobility (μ) of 6.4 cm 2 V −1 s −1 , a source−drain current ratio (I on /I off ) of around 10 5 , and a near-zero threshold voltage (V TH ). When on the other hand the TIPS-pentacene layer is added before the source− drain electrodes, i.e., in top-contact electrode TFTs (TCETFTs), a very clear depletion mode behavior is observed with an average μ of 6.3 cm 2 V −1 s −1 , an I on /I off ratio of over 10 5 , and a V TH of −80.3 V. Furthermore, a logic inverter is fabricated combining the enhancement (EETFTs)-and depletion (TCETFTs)-mode transistors, which shows a potential for the construction of organic− inorganic hybrid electronics and circuits.

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“…The decrease of I ON/OFF is primarily attributed to the significant increase in the device off current, which is a natural result of doping. [ 20,42,56,57 ]…”

Section: Resultsmentioning

confidence: 99%

Low‐Cost Nucleophilic Organic Bases as n‐Dopants for Organic Field‐Effect Transistors and Thermoelectric Devices

Wei

Chen

Guo

et al. 2021

Adv Funct Materials

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Doping is a powerful technique for tuning the electrical properties of organic semiconductors (OSCs). Although numerous studies are performed on OSC doping, thus far only a few n-type dopants have been developed. Herein, two low-cost nucleophilic organic bases are reported, namely 1,5,7-Triazabicyclo [4.4.0] dec-5-ene (TBD) and 1,5-Diazabicyclo [4.3.0] non-5-ene (DBN) for n-doping of OSCs. The two dopants are found to significantly enhance the electrical conductivity of OSCs. In particular, compared to the classic n-dopant 4-(2,3-Dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N, N-dimethylbenzylamine (N-DMBI), DBN results in significantly higher conductivity and also lower activation energy in N2200 films, indicating its high doping performance. The utilization of the n-dopants for improving device performance and controlling the device polarity of organic field-effect transistors are demonstrated.Furthermore, these dopants are employed for fabricating organic thermoelectric devices, and the power factor value of DBN-doped N2200 films is found to be about 1.6 times higher than that of N-DMBI-doped films. These results show the feasibility of using low-cost organic bases as efficient n-dopants and demonstrate their promising applications in organic electronics.

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Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane

Cited by 22 publications

References 65 publications

Semiconducting Polymer Nanowires with Highly Aligned Molecules for Polymer Field Effect Transistors

Semiconducting Polymer Nanowires with Highly Aligned Molecules for Polymer Field Effect Transistors

Multimode Operation of Organic–Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films

Low‐Cost Nucleophilic Organic Bases as n‐Dopants for Organic Field‐Effect Transistors and Thermoelectric Devices

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