Abstract:The stabilization of the threshold switching characteristics of memristive [Formula: see text] is examined as a function of sample growth and device characteristics. Sub-stoichiometric [Formula: see text] was deposited via magnetron sputtering and patterned in nanoscale ([Formula: see text]–[Formula: see text]) W/Ir/[Formula: see text]/TiN devices and microscale ([Formula: see text]–[Formula: see text]) crossbar Au/Ru/[Formula: see text]/Pt devices. Annealing the nanoscale devices at 700 [Formula: see text]C r… Show more
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