Threshold and subthreshold characteristics theory for a very small buried-channel mosfet using a majority-carrier distribution model

Ōmura, Yasuhisa; Ohwada, K.

doi:10.1016/0038-1101(81)90021-6

Cited by 13 publications

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the subthreshold current of the p-channel BC-MOSFET near the bottom surface or the top surface is given by [52] ID=IBthtrue∫ϕSSϕBS1ϕBSexp(−qϕBkBT)dϕB IBth=μnWeffVD2εSqNALeff where ϕ SS denotes the top surface potential, ϕ BS denotes the bottom surface potential, and we assume V D < k B T/q . Equation (10) can be approximated as:ID≈12IBthfalse(ϕSS−ϕBSfalse)[−1ϕSSexp(−qϕSSkBT)+1<...>…”

Section: Theoretical Modeling For Subthreshold Current Fluctuationsmentioning

confidence: 99%

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Ōmura

2018

Micromachines

View full text Add to dashboard Cite

This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO2 interfaces (top and bottom) should modulate the low-frequency fluctuation characteristics of both devices. It also addresses the low-frequency noise behavior of sub-100-nm channel SOI MOSFETs. We deepen the discussion of the low-frequency noise behavior in the subthreshold bias range in order to elucidate the device’s potential for future low-voltage and low-power applications. As expected, analyses suggest that the weak inversion channel near the top surface of the SOI MOSFET is strongly influenced by interface traps near the top surface of the SOI layer because the traps are not well shielded by low-density surface inversion carriers in the subthreshold bias range. Unexpectedly, we find that the buried channel is primarily influenced by interface traps near the top surface of the SOI layer, not by traps near the bottom surface of the SOI layer. This is not due to the simplified capacitance coupling effect. These interesting characteristics of current fluctuation spectral intensity are explained well by the theoretical models proposed here.

show abstract

Section: Theoretical Modeling For Subthreshold Current Fluctuationsmentioning

confidence: 99%

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Ōmura

2018

Micromachines

View full text Add to dashboard Cite

show abstract

Proposal of the Lateral, Unidirectional, Bipolar‐Type Insulated‐Gate Transistor (Lubistor)

Ōmura¹

2013

Soi Lubistors

View full text Add to dashboard Cite

Der MOS-Transistor als Funktionselement. Grundlagen, Wirkprinzip und Kennlinienmodell

Paul¹

1994

MOS-Feldeffekttransistoren

View full text Add to dashboard Cite

Threshold and subthreshold characteristics theory for a very small buried-channel mosfet using a majority-carrier distribution model

Cited by 13 publications

References 6 publications

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Proposal of the Lateral, Unidirectional, Bipolar‐Type Insulated‐Gate Transistor (Lubistor)

Der MOS-Transistor als Funktionselement. Grundlagen, Wirkprinzip und Kennlinienmodell

Contact Info

Product

Resources

About