Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection

Elfving, Anders; Karim, Amir; Hansson, G. V.; Ni, Wei‐Xin

doi:10.1063/1.2337867

Cited by 13 publications

(5 citation statements)

References 15 publications

(2 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Detection amplification in photodetectors is a concern and also gives another means to enhance the device sensitivity, 8 i.e., although the primary photoresponse may not be very high, the eventually measured photocurrent could be improved due to the device amplification function. The known detector solutions of this type are the avalanche photodiodes, 9 phototransistors, 10 photo-metal-oxidesemiconductor field-effect transistors, 11 etc.…”

mentioning

confidence: 99%

Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer

Shieh

Lai

et al. 2007

Applied Physics Letters

View full text Add to dashboard Cite

The authors report a two-terminal metal-oxide-semiconductor photodetector for which light is absorbed in a capping layer of silicon nanocrystals embedded in a mesoporous silica matrix on p-type silicon substrates. Operated at reverse bias, enhanced photoresponse from 300 to 700 nm was observed. The highest optoelectronic conversion efficiency is as high as 200%. The enhancements were explained by a transistorlike mechanism, in which the inversion layer acts as the emitter and trapped positive charges in the mesoporous dielectric layer assist carrier injection from the inversion layer to the contact, such that the primary photocurrent could be amplified.

show abstract

mentioning

confidence: 99%

Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer

Shieh

Lai

et al. 2007

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Table 1 shows the performance comparison for Ge QDbased IR photodetectors in the communication wavelength (1.5-1.55 μm) range displaying superior performance both in terms of responsivity and detectivity due to very low dark current attributed to the completely depleted nanowire channel in the back-gated operation [6,19,20,[31][32][33][34][35]. Also, our device shows polarization sensitivity owing to novel device structure, which is one of the unique properties that extends its impending application.…”

Section: Polarization-dependent Photocurrentmentioning

confidence: 99%

Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

et al. 2021

View full text Add to dashboard Cite

A CMOS-compatible infrared (IR; 1200–1700 nm) detector based on Ge quantum dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) platform with a superior detectivity at room temperature is presented. The spectral response of a single nanowire device measured in a back-gated field-effect transistor geometry displays a very high value of peak detectivity ∼9.33 × 1011 Jones at ∼1500 nm with a relatively low dark current (∼20 pA), which is attributed to the fully depleted Si nanowire channel on SOI substrates. The noise power spectrum of the devices exhibits a 1 / f γ , with the exponent, γ showing two different values of 0.9 and 1.8 owing to mobility fluctuations and generation-recombination of carriers, respectively. Ge QD-decorated nanowire devices exhibit a novel polarization anisotropy with a remarkably high photoconductive gain of ∼104. The superior performance of a Ge QDs/Si nanowire phototransistor in IR wavelengths is potentially attractive to integrate electro-optical devices into Si for on-chip optical communications.

show abstract

“…Over the past decades, quantum wells were implemented in devices to detect near-infrared light. 4 However, they are insensitive to normal incident light due to the selection rules and they have narrow response range. Narrow bandgap materials such as InAs quantum dots were also investigated for near-infrared detection, but they suffer from reduction in the detectivity as the temperature rises due to the increase in the dark current.…”

Section: Introductionmentioning

confidence: 99%

Semi-insulating GaAs and Au Schottky barrier photodetectors for near-infrared detection (1280 nm)

2015

View full text Add to dashboard Cite

Schottky barriers formed between metal (Au) and semiconductor (GaAs) can be used to detect photons with energy lower than the bandgap of the semiconductor. In this study, photodetectors based on Schottky barriers were fabricated and characterized for the detection of light at wavelength of 1280 nm. The device structure consists of three gold fingers with 1.75 mm long and separated by 0.95 mm, creating an E shape while the middle finger is disconnected from the outer frame. When the device is biased, electric field is stretched between the middle finger and the two outermost electrodes.The device was characterized by measuring the current-voltage (I-V) curve at room temperature. This showed low dark current on the order of 10 -10 A, while the photocurrent was higher than the dark current by four orders of magnitude. The detectivity of the device at room temperature was extracted from the I-V curve and estimated to be on the order of 5.3x10 10 cm.Hz 0.5 /W at 5 V. The step response of the device was measured from time-resolved photocurrent curve at 5 V bias with multiple on/off cycles. From which the average recovery time was estimated to be 0.63 second when the photocurrent decreases by four orders of magnitude, and the average rise time was measured to be 0.897 second. Furthermore, the spectral response spectrum of the device exhibits a strong peak close to the optical communication wavelength (~1.3 μm), which is attributed to the internal photoemission of electrons above the Schottky barrier formed between Au and GaAs.

show abstract

Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection

Abstract: Articles you may be interested inO-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

Cited by 13 publications

References 15 publications

Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer

Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer

Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

Semi-insulating GaAs and Au Schottky barrier photodetectors for near-infrared detection (1280 nm)

Contact Info

Product

Resources

About