Three-terminal CID as random access memory cell

Abstract-A charge injection device has been realized in which charge can be injected on to an MOS-capacitor from a buried layer via an isolated transfer layer. The cell is positioned vertically between word and bit line. LOCOS (local oxidation) is used to isolate the cells and (deep) ion implantation to realize the buried bit line and transfer layer. This isolation prevents carriers from diffusing to neighbouring cells and hence preserves stored information. The device physics has been analysed using simulation programs and bipolar modelling. It is shown that this device can be used as a dynamic RAM-cell of extreme simplicity and potentially small cell size compared to conventional DRAM cells.

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A vertically integrated dynamic RAM-cell: Buried bit line memory cell with floating transfer layer

Mouthaan

Vertregt

1986

Solid-State Electronics

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Strongly asymmetric doping profiles at mask edges in high-energy ion implantation

Wijburg

Hemink

Middelhoek

1990

IEEE Trans. Electron Devices

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The application of high energy ion implantation is restricted by an asymmetric doping profile at the mask edges. As a result, buried interconnect cannot easily be formed. Moreover, the holding voltage and threshold voltage of CMOS-processes with retrograde wells may be strongly affected by this asymmetry. It arises from the 7" wafer tilt, which is frequently used to avoid channeling, even in the case of nearly perpendicular (82-85") mask edges. On the mask side, which is incoming to the ion beam, a trunk to the surface has experimentally been observed. According to 2-D-Gaussian and advanced Monte Carlo simulations, the doping concentration in this trunk is about 20 percent of the maximum concentration in the case of a 85" mask angle. The simulations are fairly well able to predict the experimental results. The asymmetry effect of high energy ion implantations can also be visualized in photoresist by means of a damaged region. * Gertjan J. Hemink was born in Wisch, The Netherlands, on December 7, 1964. He received the M.Sc. degree in electrical engineenng from the University of Twente, Enschede, The Netherlands, in 1988. Since March 1988, he has been working toward the Ph.D. degree at the University of Twente. At present his main research interests are the development and application of new EEPROM structures using high energy ion implantation. His general interests are in the field of device development and application, advanced 2-D process and device simulation tools and new technologies and materials.

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The 3T-CID cell, a memory cell for high-density dynamic RAM's

Grassl

Leduc²,

Jespers³

1979

IEEE Trans. Electron Devices

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Three-terminal CID as random access memory cell

Cited by 3 publications

References 5 publications

A vertically integrated dynamic RAM-cell: Buried bit line memory cell with floating transfer layer

A vertically integrated dynamic RAM-cell: Buried bit line memory cell with floating transfer layer

Strongly asymmetric doping profiles at mask edges in high-energy ion implantation

The 3T-CID cell, a memory cell for high-density dynamic RAM's

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