Three techniques for the fabrication of high precision, mm-sized metal components based on two-photon lithography, applied for manufacturing horn antennas for THz transceivers

Standaert, Alexander; Brancato, Luigi; Lips, Bram; Ceyssens, Frederik; Puers, Robert; Reynaert, Patrick

doi:10.1088/1361-6439/aaa74b

Cited by 8 publications

(3 citation statements)

References 25 publications

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“…It is then glued in place with epoxy. The fabrication process is discussed in more detail in [15]. Figure 6 shows a picture of the fabricated CMOS die together with the fully packaged transmitter.…”

Section: B Horn Antenna Fabricationmentioning

confidence: 99%

A 400-GHz 28-nm TX and RX With Chip-to-Waveguide Transitions Used in Fully Integrated Lensless Imaging System

Standaert

Reynaert

2019

IEEE Trans. THz Sci. Technol.

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This paper presents a 400 GHz CMOS TX and RX chip with two different chip-to-waveguide transitions. A first design is based on a coupled microstrip to waveguide coupler and is integrated together with a 400 GHz oscillator in 28 nm bulk CMOS. When this transmitter is combined with a micromachined horn antenna, it is capable of providing an EIRP of 1.26 dBm. In a second design, a folded dipole based coupler is utilized to make the transition between a waveguide and a 400 GHz mixer first receiver. This receiver fully integrates an on-chip LO, mixer and baseband circuits and achieves an effective conversion gain of 39 dB and a noise figure of 45 dB. Both chips are combined into a lensless active imaging setup with a spacial resolution of 2 mm.

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Section: B Horn Antenna Fabricationmentioning

confidence: 99%

A 400-GHz 28-nm TX and RX With Chip-to-Waveguide Transitions Used in Fully Integrated Lensless Imaging System

Standaert

Reynaert

2019

IEEE Trans. THz Sci. Technol.

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“…Antenna is an important part of the THz transceiver system; off-chip antennas are commonly used such as horn antenna [9,10] and mirror reflector antenna However, this solution decreases the system integration, which limits the process of THz commercialisation. This limitation has inspired a lot of research on on-chip antennas.…”

Section: Introductionmentioning

confidence: 99%

Design of on‐chip antennas for THz detector and source in CMOS (Invited paper)

Zhao

Bai

2023

IET Microwaves Antenna & Prop

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Different on‐chip antennas in Complementary Metal‐Oxide‐Semiconductor (CMOS) technology for THz detector and source are proposed. Firstly, the size of these antennas is estimated with an equivalent CMOS substrate model. Finally, through electromagnetic simulation, the structure optimised and slotted the on‐chip antenna to realise multi‐band detection, miniaturised detection, and miniaturised source. For the THz detector, multi‐band antennas with a dual‐ring structure and miniaturised antennas with circular and diamond structures are designed. At the frequency of 300, 600, and 800 GHz, the gain of the ring antennas is 5.7, 7.2, and 7.2 dBi, respectively. The gain of the circular and diamond antenna is 5.3 and 5.96 dBi at 300 GHz. For the THz source, rectangular‐slot and T‐slot antennas are designed at the frequency of 300 GHz and the gain of the rectangular‐slot and T‐slot antennas is 2.92 and 3.87 dBi, respectively. Multi‐band antennas and miniaturised antennas effectively save the occupation area and improve the performance of the THz system. The effectiveness of antennas is verified by the measurement of the detector and the source, which indicates that the proposed on‐chip antennas have potential prospects for CMOS THz applications.

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“…Nevertheless, the fabrication steps are complicated. Furthermore, good alignment is hard to be achieved since the Epotek H54 epoxy material and a vacuum probe with an additional glass substrate are used to glue a horn antenna onto a CMOS chip [31]. Any mis-alignment reduces the signal coupling strength, dramatically increasing the insertion loss.…”

Section: Introductionmentioning

confidence: 99%

340-GHz Heterogeneously-Integrated THz Imager With 4°-Beamwidth 16×16 IPD Antenna Array for Lensless Terahertz Imaging Applications

Chiu

2021

IEEE Access

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A low-cost and planar heterogeneously-integrated 340-GHz THz imager is proposed for lensless THz imaging applications. The proposed THz imager is composed of a 16 × 16 antenna array realized in an integrated-passive-device (IPD) technology, an IPD-to-CMOS THz interconnect, and a power detector implemented in a 0.18-µm CMOS technology. The 16×16 IPD antenna array can provide simulated antenna gain of 23.9 dBi, antenna directivity of 30 dB, and half-power beamwidth (HPBW) of 5.6 • at 340 GHz. The proposed THz interconnect utilizes a transmission line coupling technique to provide low-loss and broadband signal transition from a CMOS chip to an IPD one while occupying a small chip area. The simulated insertion loss of the THz interconnect is only 1.8 dB at 340 GHz while providing 3-dB bandwidth from 230 to 446 GHz. The power detector exploits the transistor's inherent even-order nonlinearity to rectify the input signal for power detection. The power detector can give simulated voltage responsivity R V and noise equivalent power (NEP) of 190.2 kV/W and 1.9 nW/Hz 0.5 at 340 GHz, respectively, as the chopping frequency f mod is 1 kHz. A nonlinear curve fit technique is proposed to tackle the undesired fluctuation of the measured output voltage due to a standing-wave effect. Experimental results show that the proposed heterogeneously-integrated THz imager can provide measured effective R V and NEP of 0.967 MV/W and 0.18 nW/Hz 0.5 at 328 GHz, respectively, as f mod is 1 kHz. The measured antenna directivity and HPBW can be 30 dB and 4 • at 340 GHz, respectively. Such a THz imager with advantages of high antenna directivity and narrow HPBW can be employed to realize a simple, low-cost, and lensless THz imaging system. To the best of the authors' knowledge, the proposed THz imager integrates the highest number of antennas and exhibits the highest antenna directivity and the narrowest HPBW at THz frequencies reported thus far.

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Three techniques for the fabrication of high precision, mm-sized metal components based on two-photon lithography, applied for manufacturing horn antennas for THz transceivers

Abstract: Three techniques for the fabrication of high precision, mm-sized metal components based on two-photon lithography, applied for manufacturing horn antennas for THz Transceivers Journal of Micromechanics and Microengineering

Cited by 8 publications

References 25 publications

A 400-GHz 28-nm TX and RX With Chip-to-Waveguide Transitions Used in Fully Integrated Lensless Imaging System

A 400-GHz 28-nm TX and RX With Chip-to-Waveguide Transitions Used in Fully Integrated Lensless Imaging System

Design of on‐chip antennas for THz detector and source in CMOS (Invited paper)

340-GHz Heterogeneously-Integrated THz Imager With 4°-Beamwidth 16×16 IPD Antenna Array for Lensless Terahertz Imaging Applications

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