Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown
Advait Gilankar,
Ahmad Ehteshamul Islam,
Martha R. McCartney
et al.
Abstract:A unique field termination structure combining a 3-step field-plate with N-ion implantation to enhance the reverse breakdown performance of Pt/β-Ga2O3 schottky diodes (SBDs) and NiO/β-Ga2O3 heterojunction diodes (HJDs) is reported. The fabricated devices showed a low Ron,sp of 6.2 mΩ-cm2 for SBDs and 6.8 mΩ-cm2 for HJDs, respectively. HJDs showed a 0.8V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ-cm2. The devices also showed low reverse leakage current… Show more
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