Three-Photon Absorption in Zno Film Using Ultra Short Pulse Laser

Jamal, Raied K.; Hussein, Mohammed T.; Suhail, A. M.

doi:10.4236/jmp.2012.38112

Cited by 11 publications

(4 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Co 3 O 4 supported on undoped alumina was reduced to CoO, and metallic cobalt was not detected. The This peak coincides with one of the zinc oxide XRD peaks, 23 with zinc aluminate having a peak around 36°. 24 Lanthanum oxide (JCPDS 05-0602) or hydroxide (JCPDS 36-1481) do not have diffraction peaks around 35°.…”

Section: Discussionsupporting

confidence: 57%

The Effect of Temperature and Support on the Reduction of Cobalt Oxide: An in Situ X-ray Diffraction Study

Garces¹,

Hincapie²,

Zerger

et al. 2015

J. Phys. Chem. C

View full text Add to dashboard Cite

In situ X-ray diffraction was used to study the reduction of unsupported CoO, and Co3O4 under different conditions of time and temperature, and the effect of lanthanum, ruthenium, or zinc doping of γ-alumina on the reduction of supported cobalt oxide. The reduction of unsupported cobalt oxide (Co3O4) produced CoO, then hexagonal close-packed Co (Co(hcp)) and at temperatures above 400 °C, only face-centered cubic Co (Co(fcc)) was obtained. However, it was possible to obtain a mixture of Co(hcp) and Co(fcc) at 450 °C only when the reduction was performed stepwise. Metallic Co(fcc) was obtained after reduction at 350 °C of supported Co3O4 on doped alumina; however, the reduction of unsupported CoO under the same conditions produced Co(hcp). Doping alumina with ruthenium oxide favors the reduction of Co3O4 to CoO and then to metallic Co(fcc). The crystal size apparently affects the phase of metallic cobalt obtained.

show abstract

Section: Discussionsupporting

confidence: 57%

The Effect of Temperature and Support on the Reduction of Cobalt Oxide: An in Situ X-ray Diffraction Study

Garces¹,

Hincapie²,

Zerger

et al. 2015

J. Phys. Chem. C

View full text Add to dashboard Cite

show abstract

“…The shoulder peak at approximately 33.4° is possibly due to structural defects in the film because it becomes weak with increasing main spin speed. From the XRD spectrum, the average size ( D ) of ZnO crystallites is calculated using Scherrer’s equation:

D = \frac{k λ}{β c o s θ}

where k is a constant assumed to be 0.94, λ is the wavelength of the incident X-rays, β is the full width half maximum, and θ is the diffraction angle [22]. The calculated crystallite sizes in the ZnO films coated at main spin speeds of 1500, 3000, and 4000 rpm are approximately 99.1, 87.6, and 81.9 nm, respectively.…”

Section: Resultsmentioning

confidence: 99%

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

et al. 2016

View full text Add to dashboard Cite

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

show abstract

“…3b) and characterized wurtzite ZnO structure, where it was sharper for the film of 1200 nm and wider for the film of 500 nm. The other mode E 2 (high) at 467 cm −1 is assigned to oxygen atoms, it was observed for both films [15].…”

Section: Edx and Raman Studymentioning

confidence: 53%

“…Our reported results agreed with reported value of ZnO study in ref. [26,27]. It was found the NLA coefficient β of their ZnO thin films (20, 100, 300 nm) proportional to the film thickness.…”

Section: Nonlinear Optical Characteristicsmentioning

confidence: 99%

Syntheses, Structural and Nonlinear Optical Characteristics of ZnO Films Using Z-Scan Technique

Abdallah

Zidan

Allahham

2020

Silicon

View full text Add to dashboard Cite

ZnO films were deposited on two substrates Silicon (Si) and glass using RF magnetron sputtering. Our aim is to characterize the structural and the nonlinear optical (NLO) properties of the new ZnO films. Both of XRD and EDX analysis were utilized to reveal some information about the structural improvements and composition of our new films. Also, morphology and thickness of the films have been acquired from a scanning electron microscope (SEM). The nonlinear absorption (NLA) coefficients of the new films were estimated from the experimental data. Our observations suggest that the present grains on the films surface could be as clusters of crystallites. The optical band gaps (Eg) of the new ZnO prepared films were found about 3.25 eV for film thickness of 500 nm and 3.29 eV for the other film thickness of 1200 nm. It was found that the two films thickness have a good quality with (002) prefer orientation, as well as compared with (002) single crystal ZnO using z-scan method. The NLA coefficient (β) of the film is inversely proportional with the films thickness.

show abstract

Three-Photon Absorption in Zno Film Using Ultra Short Pulse Laser

Cited by 11 publications

References 28 publications

The Effect of Temperature and Support on the Reduction of Cobalt Oxide: An in Situ X-ray Diffraction Study

The Effect of Temperature and Support on the Reduction of Cobalt Oxide: An in Situ X-ray Diffraction Study

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

Syntheses, Structural and Nonlinear Optical Characteristics of ZnO Films Using Z-Scan Technique

Contact Info

Product

Resources

About