2017 IEEE 14th International Conference on Group IV Photonics (GFP) 2017
DOI: 10.1109/group4.2017.8082214
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Three-mode synthesis of slab Gaussian beam in ultra-low-loss in-plane nanophotonic silicon waveguide crossing

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Cited by 18 publications
(19 citation statements)
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“…Another method to fulfill the phase difference requirements between the two lowest even modes is to employ three cascaded multimode tapers, and the insertion loss is 0.13 dB and the crosstalk is −43.5 dB at the footprint of 4.16 × 4.16 µm 2 [38], as shown in Figure 3b. The symmetric MMI crossing supporting TE 0 , TE 2 and TE 4 modes with wider MMI waveguides and the synthesized Gaussian-like focusing pattern mode has an extremely low insertion loss of 0.007 dB ± 0.004 dB and crosstalk of <−40 dB at a footprint of 30 × 30 µm 2 [39]. The low-loss Bloch waves can be viewed as the combination of the multimode self-focusing property with the matching of the field pattern and dielectric structure periodicities, which have low insertion loss of 0.045 dB and crosstalk of −34 dB [40].…”
Section: Multimode Interference Methodsmentioning
confidence: 99%
“…Another method to fulfill the phase difference requirements between the two lowest even modes is to employ three cascaded multimode tapers, and the insertion loss is 0.13 dB and the crosstalk is −43.5 dB at the footprint of 4.16 × 4.16 µm 2 [38], as shown in Figure 3b. The symmetric MMI crossing supporting TE 0 , TE 2 and TE 4 modes with wider MMI waveguides and the synthesized Gaussian-like focusing pattern mode has an extremely low insertion loss of 0.007 dB ± 0.004 dB and crosstalk of <−40 dB at a footprint of 30 × 30 µm 2 [39]. The low-loss Bloch waves can be viewed as the combination of the multimode self-focusing property with the matching of the field pattern and dielectric structure periodicities, which have low insertion loss of 0.045 dB and crosstalk of −34 dB [40].…”
Section: Multimode Interference Methodsmentioning
confidence: 99%
“…An insertion loss of 0.02 dB [95] and 0.04 dB [28] were achieved with a fully-etched and shallow-etched waveguide, respectively. We presented a waveguide crossing (Figure 7b) with the ultralow loss of 0.007 dB and an ultralow crosstalk of −40 dB based on the three-mode synthesis of a 1-D Gaussian beam [96]. Recently, a monolithically integrated multilayer silicon nitride-on-silicon waveguide crossing (Figure 7c) was proposed [97,98] with insertion loss as low as 0.003 dB and crosstalk of −56 dB using the low-pressure-chemical-vapor-deposition (LPCVD) silicon nitride layer on SOI wafers.…”
Section: Key Technologies Of Silicon Photonic Switch Fabricsmentioning
confidence: 99%
“…One particular obstacle for this is that most PIC technologies only support a single waveguide layer, and therefore need to introduce engineered waveguide crossings to connect nontrivial circuit topologies. [68], [69].…”
Section: Circuit Layout Generationmentioning
confidence: 99%