Three-Layered Photovoltaic Cell with an Enlarged Photoactive Region of Codeposited Dyes

Abstract

Three-layered organic solar cells with an interlayer of codeposited dyes of ptype Copper Phthalocyanine (CuPc) and n-type 5,10,15,20-Tetra (4-Pyridil)21H,23H-Porphine (TPyP) between the respective dye layers were prepared and characterised. The analysis of their dark la lumibre avec une longueur d'onde de 520 nm et une intensit4 lumineuse de 30 ~IW cm~1.

Recent Advances in Hole-Transporting Layers for Organic Solar Cells

“… reflects the current losses from the pinholes and traps in the film. Established relationships describing J-V behavior in OSCs and directly accounting for resistance effects on cell performance are the following [ 61 , 62 , 63 , 64 ]: where, is the diode current density, is the leakage current density, is the photogenerated current density, is the reverse saturation current, e is the elementary charge, n is the diode ideality factor, k B is Boltzmann’s constant, and T is temperature. is an undesirable current injected from the electrodes in the opposite direction to .…”

“…R sh reflects the current losses from the pinholes and traps in the film. Established relationships describing J-V behavior in OSCs and directly accounting for resistance effects on cell performance are the following [61][62][63][64]:…”

Study of Optical and Electrical Properties of RF-Sputtered ZnSe/ZnTe Heterojunctions for Sensing Applications

“…In this context, the observed asymmetry of the dark I-V characteristics is due to the heterojunction present at the ZnSe/ZnTe interface, the Au back-electrode and the ZnO/ITO top-electrode featuring a good ohmic behaviour. Analysing further the measured I-V characteristics in the dark, we found that it follows the modified Shockley-Read equation [47][48][49][50]:…”

“…where I is the current flowing just through the heterojunction, I 0 is the saturation current, q is the elementary charge, U is the applied voltage to the whole structure, n is the ideality factor of the diode, k B is the Boltzmann constant, and R S and R Sh are the series and shunt resistances, respectively. By performing the logarithmic plot of the intensity of the current, i.e., Equation ( 5) at forward bias, as a function of the applied voltage, i.e., ln I versus U (see Figure 5b), a first determination of the diode ideality factor is obtained (n 1 = 5.44) along with the saturation current (I 0 1 = 6.93 × 10 −9 A) [26,49,50]. Both values are not accurately computed due to the great impact of series and shunt resistances, i.e., R S and R Sh , on the linearity of this plot.…”

“…Therefore, the second step was to remove the effect of the series resistance and shunt resistance on this procedure to accurately evaluate the ideality factor and saturation current. To find these resistances, the differential resistance of the structure (R 0 ) is plotted versus the reciprocal current, i.e., R 0 = f (1/I), as the Equation ( 6) suggests [26,[47][48][49][50][51]: The computed values are 40.5 kΩ and 10.5 MΩ for the series and shunt resistances, respectively (see Figure 5c). The final step, in order to obtain more accurate values for the ideality factor and saturation current, are a change in variable for the voltage (U) applied to the structure to the drop voltage (Y) across the heterojunction, i.e., Y = U − IR S , and a subsequent semi-logarithmic plot of real current I − Y/R Sh crossing the heterojunction, as a function of Y, see Figure 5d that obeys the modified Shockley-Read equation [50,51]:…”